H10W 72/623
Characterised by the structures of the outermost layers
Official title: {characterised by the structures of the outermost layers, e.g. multilayered coatings}
H10W72/623 (Characterised by the structures of the outermost layers) appears on 43 US grants and 61 published applications in this corpus.
Search patents in H10W- Granted patents
- 43
- Published applications
- 61
- Assignees
- 27
- Inventors
- 144
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2007 | 0 | 2 |
| 2008 | 0 | 0 |
| 2009 | 0 | 1 |
| 2010 | 1 | 0 |
| 2011 | 1 | 1 |
| 2012 | 1 | 3 |
| 2013 | 0 | 4 |
| 2014 | 3 | 0 |
| 2015 | 3 | 2 |
| 2016 | 2 | 3 |
| 2017 | 2 | 2 |
| 2018 | 1 | 2 |
| 2019 | 3 | 3 |
| 2020 | 1 | 7 |
| 2021 | 5 | 4 |
| 2022 | 5 | 8 |
| 2023 | 2 | 3 |
| 2024 | 7 | 5 |
| 2025 | 5 | 7 |
| 2026 | 1 | 4 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Power semiconductor module29 Sep 2026US 12,751,317 B2Wuxi Leapers Semiconductor Co., Ltd.
- Semiconductor device26 Aug 2025US 12,400,974 B2Rohm Co., Ltd.
- Connecting strip for discrete and power electronic devices29 Jul 2025US 12,374,648 B2STMicroelectronics S,r.l.
- Semiconductor device1 Jul 2025US 12,347,756 B2Rohm Co., Ltd.
- Semiconductor device and methods of manufacturing semiconductor devices25 Mar 2025US 12,261,145 B2Amkor Technology Singapore Holding Pte.Ltd.
- Semiconductor device and method of manufacturing semiconductor device17 Sep 2026US 2026/0282921 A1Kabushiki Kaisha Toshiba
- Clip for die top interconnection of power module applications21 May 2026US 2026/0144121 A1
- Substrate Clip with Sheet and Patterned Electrically Conductive Structure Having Different Thicknesses14 May 2026US 2026/0136948 A1
- Clip-bonded semiconductor package and corresponding method of manufacturing such a semiconductor package2 Apr 2026US 2026/0096462 A1Nexperia B. V.
- Semiconductor device27 Nov 2025US 2025/0364438 A1Rohm Co., Ltd.
Most cited
By later US patents
- Method of double patterning lithography process using plurality of mandrels for integrated circuit applications5US 10,170,306 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2019
- Power semiconductor device in lead frame employing connecting element with conductive film5US 8,013,441 B2Infineon Technologies AG · 2011
- Semiconductor device using diffusion soldering5US 8,975,117 B2Infineon Technologies AG · 2015
- Power semiconductor device5US 9,343,388 B2Mitsubishi Electric Corporation · 2016
- Semiconductor device3US 11,081,433 B2Rohm Co., Ltd. · 2021