Power semiconductor module

A power semiconductor module, comprising a metal bottom plate, an insulating heat dissipation material layer, a chip, a binding plate, silica gel, and an outer housing,

• wherein the binding plate comprises a copper plate and a two-dimensional array of copper straps extending along the copper plate in a first direction and a second direction, the copper plate is connected to each copper strap of the two-dimensional array of copper straps through welding such that copper of the copper plate is entirely contiguous without any gaps in the copper at all areas directly beneath an entirety of each copper strap of the two-dimensional array of copper straps, the binding plate is configured to connect circuits of various components, the metal bottom plate is connected to the insulating heat dissipation material layer through a tin soldering, the chip is connected to the insulating heat dissipation material layer through the tin soldering, the chip is connected to each copper strap of the two-dimensional array of copper straps, and each copper strap of the two-dimensional array of copper straps is connected to the insulating heat dissipation material layer, wherein the copper plate is a single-pieced plate without openings on the copper plate, wherein the copper plate is connected to the chip via a first part of the plurality of copper straps, and the copper plate is thermally connected to the insulating heat dissipation material layer via a second part of the plurality of copper straps, so that the copper plate, without touching with the outer housing, is only supported simultaneously by the insulating heat dissipation material layer and the chip through the plurality of copper straps.