Semiconductor device

A GaN semiconductor device comprising:

• a first semiconductor element including a first obverse surface and a first reverse surface that are spaced apart in a thickness direction, the first obverse surface being provided with a first drain electrode, a first source electrode, and a first gate electrode;
• a second semiconductor element including a second obverse surface and a second reverse surface that are spaced apart in the thickness direction, the second obverse surface being provided with a second drain electrode, a second source electrode, and a second gate electrode;
• a control element electrically connected to the first gate electrode and the second gate electrode;
• a plurality of leads spaced apart from each other;
• a first connection member having a first end joined to the first source electrode;
• and
• a second connection member having a first end joined to the second drain electrode,
• wherein the plurality of leads include a first lead opposed to the first reverse surface and on which the first semiconductor element is mounted, a second lead opposed to the second reverse surface and on which the second semiconductor element is mounted, and a third lead on which the control element is mounted,
• the first lead and the second lead overlap with each other as viewed in a first direction perpendicular to the thickness direction,
• the third lead overlaps with the first lead and the second lead as viewed in a second direction perpendicular to the thickness direction and the first direction,
• the first lead includes a first die pad portion to which the first semiconductor element is joined and a first bonding portion to which a second end of the first connection member is joined,
• the first bonding portion is located between the first semiconductor element and the second semiconductor element as viewed in the thickness direction, and
• a second end of the second connection member is joined to the first bonding portion.