Power semiconductor device in lead frame employing connecting element with conductive film

A power semiconductor device in lead frame technology with a vertical current path through a power semiconductor chip, the power semiconductor chip comprising:

• at least one large-area electrode on its top side;
• and
• a large-area electrode on its rear side;
• wherein the vertical current path is formed between the rear side electrode and the top side electrode;
• wherein the rear side electrode is surface-mounted on a lead frame chip island of a lead frame;
• wherein the top side electrode is electrically connected to at least one internal lead of the lead frame via a connecting element;
• wherein the connecting element comprises a first material and has an electrically conductive film comprising a second material disposed on a surface facing the top side electrode, wherein the electrically conductive film has a higher current conductivity than the connecting element, wherein the electrically conductive film comprises a plastic film filled with silver particles;
• and
• wherein the surface of the connecting element facing the top side electrode also faces the at least one internal lead, and wherein the electrically conductive film extends along the surface of the connecting element facing the top side electrode from the top side electrode to the at least one internal lead.