Power semiconductor device

A power semiconductor device comprising:

• a semiconductor-element substrate including an insulation substrate, a front-surface electrode pattern formed on a surface of the insulating substrate, and a back-surface electrode pattern formed on another surface of the insulating substrate;
• a semiconductor element for electric power which is affixed, by using a bonding material, to the surface of the front-surface electrode pattern opposite the insulating substrate;
• a partition wall which is provided on the front-surface electrode pattern by bonding, and encloses the semiconductor element for electric power;
• a first sealing resin member which is filled inside the partition wall, and covers the semiconductor element for electric power and the front-surface electrode pattern in the partition wall;
• and
• a second sealing resin member which covers the partition wall, the first sealing resin member and a part of the semiconductor-element substrate which is exposed from the partition wall,
• wherein a modulus of elasticity of the second sealing resin member is smaller than a modulus of elasticity of the first sealing resin member, and
• wherein an electrode for a relay terminal which is separate from the front-surface electrode pattern is disposed on a surface of the partition wall,
• the power semiconductor device further comprising a first wiring from inside of the partition wall to the electrode for a relay terminal, and second wiring, which is thicker than the first wiring, from the electrode for the relay terminal to outside of the partition wall,
• wherein the first wiring is entirely covered with the first sealing resin member and the second wiring is covered with the second sealing resin member.