Semiconductor device and method of manufacturing semiconductor device

A semiconductor device comprising:

• a semiconductor chip having a first chip surface facing a first direction and a second chip surface facing opposite the first direction;
• a first electrode terminal that faces the first chip surface;
• a second electrode terminal that faces the second chip surface and is bonded to the second chip surface;
• and
• a bonding material comprising solder that that bonds the first chip surface of the semiconductor chip to the first electrode terminal, wherein the bonding material includes a first bonding material having a first bonding layer, and a second bonding material having a second bonding layer bonded to the first bonding material and the first electrode terminal, wherein
• a melting point of the first bonding material is higher than that for the second bonding material.

A semiconductor device comprising:

• a semiconductor chip having a first chip surface that substantially faces a first direction and a second chip surface substantially facing opposite the first direction;
• a first electrode terminal that faces the first chip surface;
• a second electrode terminal that faces the second chip surface and is bonded to the second chip surface;
• a bonding material comprising solder that that bonds the first chip surface of the semiconductor chip to the first electrode terminal, wherein the bonding material includes a first bonding material having a first bonding layer, and a second bonding material having a second bonding layer bonded to the first bonding material and the first electrode terminal;
• and
• means for preventing a gap between the bonding material and the first chip surface, wherein the first chip surface is warped with a center of the first chip surface further from the first electrode terminal than ends of the first chip surface.