Semiconductor device

A semiconductor device comprising:

• an insulating support member having a front surface;
• a first conductive layer disposed on the front surface;
• a first semiconductor element having a first side facing the front surface and a second side facing away from the first side in a thickness direction of the insulating support member, the first semiconductor element being provided with a first electrode and a second electrode on the second side and with a third electrode on the first side, the third electrode being disposed on and electrically bonded to the first conductive layer, the first semiconductor element being formed of a semiconductor material mainly composed of silicon carbide;
• a first lead connected to the first electrode, the first lead being made of copper or a copper alloy and having a shape of a strip;
• a first gate conductor having one end connected to the second electrode;
• a first bonding layer disposed between the first lead and the first electrode;
• a second bonding layer disposed between the first gate conductor and the second electrode;
• a first sense conductor having one end connected to the first electrode;
• and
• a second conductive layer spaced apart from the first conductive layer,
• wherein the second bonding layer is formed as a layer different from the first bonding layer, and
• the first sense conductor and the first gate conductor each have a smaller coefficient of linear expansion than that of the first conductive layer or that of the second conductive layer.

A semiconductor device comprising:

• an insulating support member having a front surface;
• a first conductive layer disposed on the front surface;
• a first semiconductor element having a first side facing the front surface and a second side facing away from the first side in a thickness direction of the insulating support member, the first semiconductor element being provided with a first electrode and a second electrode on the second side and with a third electrode on the first side, the third electrode being disposed on and electrically bonded to the first conductive layer, the first semiconductor element being formed of a semiconductor material mainly composed of silicon carbide;
• a first lead connected to the first electrode, the first lead being made of copper or a copper alloy and having a shape of a strip;
• a first gate conductor having one end connected to the second electrode;
• a first bonding layer disposed between the first lead and the first electrode;
• a second bonding layer disposed between the first gate conductor and the second electrode;
• a first sense conductor having one end connected to the first electrode;
• a first sense wire connected to the first sense conductor;
• and
• a first gate wiring layer connected to the first gate conductor,
• wherein the second bonding layer is formed as a layer different from the first bonding layer, and
• the first sense wire and the first gate wiring layer overlap with the front surface as viewed in the thickness direction.