H10W 20/092
By smoothing the dielectric parts
Official title: {by smoothing the dielectric parts}
H10W20/092 (By smoothing the dielectric parts) appears on 1,246 US grants and 898 published applications in this corpus.
Search patents in H10W- Granted patents
- 1,246
- Published applications
- 898
- Assignees
- 272
- Inventors
- 2,316
- Latest grant
- 18 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 2 | 0 |
| 1983 | 1 | 0 |
| 1984 | 5 | 0 |
| 1985 | 5 | 0 |
| 1986 | 9 | 0 |
| 1987 | 11 | 0 |
| 1988 | 4 | 0 |
| 1989 | 17 | 0 |
| 1990 | 15 | 0 |
| 1991 | 14 | 0 |
| 1992 | 17 | 0 |
| 1993 | 20 | 0 |
| 1994 | 28 | 0 |
| 1995 | 24 | 0 |
| 1996 | 32 | 0 |
| 1997 | 23 | 0 |
| 1998 | 36 | 0 |
| 1999 | 57 | 0 |
| 2000 | 59 | 0 |
| 2001 | 77 | 29 |
| 2002 | 50 | 52 |
| 2003 | 57 | 51 |
| 2004 | 46 | 42 |
| 2005 | 29 | 48 |
| 2006 | 31 | 30 |
| 2007 | 32 | 38 |
| 2008 | 24 | 29 |
| 2009 | 19 | 16 |
| 2010 | 22 | 19 |
| 2011 | 24 | 24 |
| 2012 | 12 | 22 |
| 2013 | 23 | 22 |
| 2014 | 23 | 27 |
| 2015 | 26 | 27 |
| 2016 | 30 | 27 |
| 2017 | 23 | 34 |
| 2018 | 39 | 33 |
| 2019 | 29 | 47 |
| 2020 | 52 | 62 |
| 2021 | 41 | 44 |
| 2022 | 35 | 42 |
| 2023 | 30 | 42 |
| 2024 | 33 | 30 |
| 2025 | 35 | 37 |
| 2026 | 21 | 24 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Cyclic etch-ash process for semiconductor processing7 Jul 2026US 12,677,617 B2Texas Instruments Incorporated
- Composition for semiconductor processing and method of fabricating semiconductor device using the same30 Jun 2026US 12,668,718 B2Ycchem Co., Ltd.
- Method of forming semiconductor memory device9 Jun 2026US 12,652,797 B2Fujian Jinhua Integrated Circuit Co., Ltd.
- Via for semiconductor device connection9 Jun 2026US 12,653,020 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Methods and systems for area selective processing8 Oct 2026US 2026/0314360 A1Tokyo Electron Limited
- Semiconductor structure including devices with different channel lengths, and method for manufacturing the same20 Aug 2026US 2026/0247892 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Substrate cleaning device and substrate cleaning method30 Jul 2026US 2026/0216755 A1Samsung Electronics Co., Ltd.
- Bonded device structures including slotted redistribution layer pads and methods of fabrication thereof2 Jul 2026US 2026/0190980 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Aluminum nitride hybrid bonding layers and methods of forming the same25 Jun 2026US 2026/0182331 A1Micron Technology, Inc.
Most cited
By later US patents
- Interlayer dielectric with a composite dielectric stack530US 6,437,444 B2Intel Corporation · 2002
- Interconnect with low dielectric constant insulators for semiconductor integrated circuit manufacturing499US 6,187,672 B1Conexant Systems, Inc. · 2001
- Process for forming silicon oxide film490US 5,314,724 AFujitsu Limited · 1994
- Multistep planarized chemical vapor deposition process with the use of low melting inorganic material for flowing while depositing438US 4,962,063 AAPPLIED Materials.Inc. · 1990
- Apparatus for manufacturing semiconductor device and method for manufacturing semiconductor device417US 5,314,538 AAlcan-Tech Co., Inc. · 1994