Semiconductor structure including devices with different channel lengths, and method for manufacturing the same

A semiconductor structure, comprising:

• a first device region which includes
• a first channel layer,
• a first gate element separated from the first channel layer, and
• first source/drain contacts disposed on the first channel layer opposite to the first gate element, bottoms of two adjacent ones of the first source/drain contacts being spaced apart from each other by a first distance;
• a first side region displaced from the first device region, the first side region including a first patterned portion;
• a second device region displaced from the first device region and the first side region, the second device region including
• a second channel layer,
• a second gate element separated from the second channel layer, and
• second source/drain contacts disposed on the second channel layer opposite to the second gate element, bottoms of two adjacent ones of the second source/drain contacts being spaced apart from each other by a second distance, the first distance being larger than the second distance;
• and
• a second side region displaced from the first device region, the first side region and the second device region, the second side region including a second patterned portion, a pattern density of the first patterned portion being larger than a pattern density of the second patterned portion.

A semiconductor structure, comprising:

• a first device region which includes
• a first channel layer,
• a first gate element separated from the first channel layer,
• first source/drain contacts disposed on the first channel layer opposite to the first gate element, bottoms of two adjacent ones of the first source/drain contacts being spaced apart from each other by a first distance, and
• a first dielectric portion disposed on the first channel layer to surround the first source/drain contacts;
• a first side region aside the first device region, the first side region including a first patterned portion;
• a second device region displaced from the first device region and the first side region, the second device region including
• a second channel layer,
• a second gate element separated from the second channel layer,
• second source/drain contacts disposed on the second channel layer opposite to the second gate element, bottoms of two adjacent ones of the second source/drain contacts being spaced apart from each other by a second distance, the first distance being different from the second distance, and
• a second dielectric portion surrounding the second source/drain contacts, a top surface of the second dielectric portion being lower than a top surface of the first dielectric portion;
• and
• a second side region aside the second device region, the second side region including a second patterned portion, the second patterned portion having dummy insertions, a top surface of at least one of the dummy insertions being lower than the top surface of the second dielectric portion.