Composition for semiconductor processing and method of fabricating semiconductor device using the same

A method of fabricating a semiconductor device, comprising:

• preparing a surface plate on which a polishing pad having a polishing surface is mounted;
• preparing a carrier for accommodating a polishing target;
• rotating the surface plate and the carrier while placing the polishing surface of the polishing pad and a surface to be polished of the polishing target in contact with each other;
• and
• applying a polishing composition for semiconductor processing onto the polishing surface,
• wherein the polishing composition for semiconductor processing comprises abrasive grains and at least one additive, and has an etch rate ratio correlation value ranging from 1.45 to 1.90 as calculated by Equation 1 below:
• R
• O
• 2
• (
• R
• Cu
• ×
• R
• N
• )
• ,
• [
• Equation
• ⁢
• 1
• ]
• wherein RO represents a polishing rate (Å/min) of the polishing composition for semiconductor processing for a silicon oxide film, RN represents a polishing rate (Å/min) of the polishing composition for semiconductor processing for a silicon nitride film, and RCu represents a polishing rate (Å/min) of the polishing composition for semiconductor processing for a copper film,
• wherein, when RO, RN, and RCu are measured, 100 parts by weight of the polishing composition for semiconductor processing and 0.25 parts by weight of hydrogen peroxide are mixed to obtain a mixture, polishing of a wafer having the silicon oxide film, a wafer having the silicon nitride film, and a wafer having the copper film is performed for 60 seconds while applying the mixture containing the polishing composition for semiconductor processing at a flow rate of 300 mL/min onto the polishing surface under conditions of a carrier pressurization of 3.0 psi, a carrier rotation speed of 120 rpm, and a surface plate rotation speed of 117 rpm, and then RO, RN, and RCu are measured.

A method of fabricating a semiconductor device, comprising:

• forming a substrate comprising a via;
• forming a copper electrode disposed on the via;
• forming a silicon nitride film on the substrate and the copper electrode;
• forming a silicon oxide film on the silicon nitride film;
• and
• polishing the copper electrode, the silicon nitride film, and the silicon oxide film using a polishing composition for semiconductor processing,
• wherein the polishing composition for semiconductor processing comprises abrasive grains and at least one additive, and has an etch rate ratio correlation value ranging from 1.45 to 1.90 as calculated by Equation 1 below:
• R
• O
• 2
• (
• R
• Cu
• ×
• R
• N
• )
• ,
• [
• Equation
• ⁢
• 1
• ]
• wherein RO represents a polishing rate (Å/min) of the polishing composition for semiconductor processing for the silicon oxide film, RN represents a polishing rate (Å/min) of the polishing composition for semiconductor processing for the silicon nitride film, and R Cu represents a polishing rate (Å/min) of the polishing composition for semiconductor processing for the copper electrode, and
• wherein, when RO, RN, and RCu are measured, 100 parts by weight of the polishing composition for semiconductor processing and 0.25 parts by weight of hydrogen peroxide are mixed to obtain a mixture, polishing of a wafer having the silicon oxide film, a wafer having the silicon nitride film, and a wafer having the copper film is performed for 60 seconds while introducing the mixture containing the polishing composition for semiconductor processing at a flow rate of 300 mL/min under conditions of a carrier pressurization of 3.0 psi, a carrier rotation speed of 120 rpm, and a surface plate rotation speed of 117 rpm, and then RO, RN, and RCu are measured.