Aluminum nitride hybrid bonding layers and methods of forming the same

Abstract

A method of making a semiconductor device assembly is provided. The method comprises forming, in a substrate of a semiconductor device, a plurality of TSVs extending from a front side of the substrate to an intermediate depth of the substrate, and removing material from a rear side of the substrate opposite the front side to reveal protruding portions of the plurality of TSVs. The method further comprises depositing a layer of a dielectric material having a first thickness over the rear side of the substrate and the protruding portions of the plurality of TSVs, and depositing a layer of aluminum nitride having a second thickness greater than the first thickness over the layer of dielectric material. The method further comprises performing a planarizing process to remove portions of the layer of aluminum nitride and the dielectric material to reveal end surfaces of the protruding portions of the plurality of TSVs.

Dependencies are inferred from the claim text.