H10W 20/0372
Comprising multiple barrier, adhesion or liner layers
Official title: {comprising multiple barrier, adhesion or liner layers}
H10W20/0372 (Comprising multiple barrier, adhesion or liner layers) appears on 109 US grants and 139 published applications in this corpus.
Search patents in H10W- Granted patents
- 109
- Published applications
- 139
- Assignees
- 27
- Inventors
- 344
- Latest grant
- 26 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2000 | 1 | 0 |
| 2001 | 1 | 1 |
| 2002 | 0 | 1 |
| 2003 | 3 | 0 |
| 2004 | 2 | 5 |
| 2005 | 4 | 8 |
| 2006 | 3 | 9 |
| 2007 | 4 | 1 |
| 2008 | 1 | 4 |
| 2009 | 3 | 2 |
| 2010 | 8 | 6 |
| 2011 | 5 | 4 |
| 2012 | 1 | 2 |
| 2013 | 4 | 4 |
| 2014 | 2 | 4 |
| 2015 | 3 | 6 |
| 2016 | 6 | 7 |
| 2017 | 6 | 2 |
| 2018 | 3 | 7 |
| 2019 | 7 | 8 |
| 2020 | 2 | 7 |
| 2021 | 10 | 9 |
| 2022 | 6 | 11 |
| 2023 | 8 | 11 |
| 2024 | 4 | 10 |
| 2025 | 8 | 6 |
| 2026 | 4 | 4 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Manufacturing method for forming self-aligned interconnection structure26 May 2026US 12,642,068 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device including conductive structure and method for manufacturing the same7 Apr 2026US 12,598,984 B2Samsung Electronics Co., Ltd.
- Interconnector and electronic apparatus including the same3 Mar 2026US 12,568,813 B2Samsung Electronics Co., Ltd.
- Interconnect line structures with metal chalcogenide cap materials13 Jan 2026US 12,525,488 B2Intel Corporation
- Integrated circuit interconnect structures with graphene cap19 Aug 2025US 12,394,716 B2Intel Corporation
- Semiconductor structure and manufacturing method thereof13 Aug 2026US 2026/0239942 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Interconnect structure including vertical conductors and method for manufacturing the same30 Jul 2026US 2026/0223664 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Interconnect structure, electronic device including the same, and electronic apparatus including the same18 Jun 2026US 2026/0173855 A1Ajou University Industry-Academic Cooperation Foundation
- Method of extending queue time between process steps21 May 2026US 2026/0144030 A1Tokyo Electron Limited
- Selective cap deposition on graphene-capped conductive lines6 Nov 2025US 2025/0343147 A1Intel Corporation
Most cited
By later US patents
- Interconnect structure formed in porous dielectric material with minimized degradation and electromigration395US 6,528,409 B1Advanced Micro Devices, Inc. · 2003
- Selective refractory metal and nitride capping219US 6,844,258 B1Novellus Systems, Inc. · 2005
- Interfacial layers for electromigration resistance improvement in damascene interconnects62US 7,648,899 B1Novellus Systems, Inc. · 2010
- Selective refractory metal and nitride capping56US 7,157,798 B1Novellus Systems, Inc. · 2007
- Structures of and methods and tools for forming in-situ metallic/dielectric caps for interconnects55US 8,039,966 B2International Business Machines Corporation · 2011