Manufacturing method for forming self-aligned interconnection structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKai-Fang Cheng, Hsiao-Kang Chang
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Abstract
A self-aligned interconnection structure includes a dielectric layer, a conductive feature, a capping layer, a first barrier layer and a second barrier layer. The conductive feature is formed in the dielectric layer, and the conductive feature has a top surface. The capping layer is disposed on the top surface of the conductive feature, and the capping layer does not cover the dielectric layer. The first barrier layer is disposed on the capping layer, and the first barrier layer does not cover the dielectric layer. The second barrier layer covers the first barrier layer and the dielectric layer, and the first barrier layer and the second barrier layer are formed of different materials.
Claims16
A method for manufacturing a self-aligned interconnection structure, comprising:
- forming a conductive feature in a dielectric layer, the conductive feature having a top surface;
- forming a capping layer on the top surface of the conductive feature, and the capping layer does not cover the dielectric layer;
- forming a first barrier layer on the capping layer, and the first barrier layer does not cover the dielectric layer;
- and
- forming a second barrier layer on the first barrier layer and the dielectric layer, wherein the first barrier layer and the second barrier layer are formed of different materials, wherein forming the second barrier layer comprises reacting a silicon-containing precursor with NH3 plasma to form a nitrogen-doped silicon carbide film,
- wherein before forming the first barrier layer on the capping layer, a pre-treatment process is performed on a surface of the dielectric layer to help selectively deposit the first barrier layer on the capping layer.
A method for manufacturing a self-aligned interconnection structure, comprising:
- forming a conductive feature in a dielectric layer, the conductive feature having a top surface;
- forming a capping layer on the top surface of the conductive feature, and the capping layer does not cover the dielectric layer;
- and
- forming a first barrier layer on the capping layer, and the first barrier layer does not cover the dielectric layer, wherein the first barrier layer comprises AlNx, AlOx, AlOxNy or a combination thereof, and
- forming a second barrier layer on the first barrier layer and the dielectric layer, wherein the first barrier layer and the second barrier layer are formed of different materials, wherein forming the second barrier layer comprises reacting a silicon-containing precursor with NH3 plasma to form a nitrogen-doped silicon carbide film or an oxygen-doped silicon carbide film,
- wherein before forming the first barrier layer on the capping layer, a pre-treatment process is performed on a surface of the dielectric layer to help selectively deposit the first barrier layer on the capping layer.
A method for manufacturing a self-aligned interconnection structure, comprising:
- forming a conductive feature in a dielectric layer, the conductive feature having a top surface;
- forming a capping layer on the top surface of the conductive feature, and the capping layer does not cover the dielectric layer;
- and
- forming a first barrier layer on the capping layer, and the first barrier layer does not cover the dielectric layer, wherein the first barrier layer comprises AlNx, AlOx, AlOxNy or a combination thereof;
- before forming the first barrier layer on the capping layer, a pre-treatment process is performed on a surface of the dielectric layer to help selectively deposit the first barrier layer on the capping layer without using a self-assembled monolayer (SAM), wherein the pre-treatment process is performed by generating H2 plasma formed from a hydrogen-containing precursor, and the H2 plasma changes the surface of the dielectric layer by reducing a number of unwanted hydroxyl groups on the surface of the dielectric layer and providing a chemical modification of the dielectric layer through surface hydrogenation.
Dependencies are inferred from the claim text.