Selective cap deposition on graphene-capped conductive lines

An integrated circuit (IC) structure, comprising:

• a front end of line (FEOL) layer;
• and
• a back end of line (BEOL) layer over the FEOL layer, wherein the BEOL layer includes:
• an insulator material, a conductive line in an opening in the insulator material, wherein the conductive line includes a first conductive material, a liner on sidewalls of the opening, a material including carbon over the first conductive material, and a second conductive material over the material including carbon and over the liner.

A method of fabricating an integrated circuit (IC) structure, the method comprising:

• providing a preliminary IC structure including a device region and a layer over the device region that includes a conductive line in an opening in an insulator material, wherein the conductive line includes a first conductive material;
• providing a layer of graphene over the conductive line;
• and
• providing a second conductive material over the graphene.