H10W 20/0265
Characterised by the sidewall insulation
Official title: {characterised by the sidewall insulation}
H10W20/0265 (Characterised by the sidewall insulation) appears on 584 US grants and 723 published applications in this corpus.
Search patents in H10W- Granted patents
- 584
- Published applications
- 723
- Assignees
- 154
- Inventors
- 1,067
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 4 |
| 2003 | 3 | 3 |
| 2004 | 3 | 9 |
| 2005 | 8 | 13 |
| 2006 | 13 | 26 |
| 2007 | 8 | 13 |
| 2008 | 12 | 13 |
| 2009 | 8 | 24 |
| 2010 | 12 | 25 |
| 2011 | 22 | 37 |
| 2012 | 29 | 63 |
| 2013 | 52 | 48 |
| 2014 | 45 | 40 |
| 2015 | 39 | 46 |
| 2016 | 44 | 40 |
| 2017 | 51 | 30 |
| 2018 | 28 | 38 |
| 2019 | 27 | 20 |
| 2020 | 20 | 22 |
| 2021 | 23 | 27 |
| 2022 | 24 | 52 |
| 2023 | 29 | 49 |
| 2024 | 36 | 39 |
| 2025 | 32 | 26 |
| 2026 | 13 | 16 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device25 Aug 2026US 12,720,802 B2Samsung Electronics Co., Ltd.
- Advanced interconnection for wafer on wafer packaging9 Jun 2026US 12,653,013 B2Micron Technology, Inc.
- Trench isolation connectors for stacked structures5 May 2026US 12,622,237 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Vias with vertically non-uniform or discontinuous stack5 May 2026US 12,622,250 B2Intel Corporation
- Solid-state image sensor, and electronic device24 Mar 2026US 12,588,479 B2Sony Semiconductor Solutions Corporation
- Through-substrate via and method of making same9 Jul 2026US 2026/0198274 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of manufacturing semiconductor device2 Jul 2026US 2026/0190973 A1Sony Semiconductor Solutions Corporation
- Semiconductor structure, manufacturing method therefor, and electronic device25 Jun 2026US 2026/0182322 A1Huawei Technologies Co., Ltd.
- Apparatus including tsv and multiple insulating materials25 Jun 2026US 2026/0182333 A1Micron Technology, Inc.
- Method for Producing a Through-semiconductor Connection18 Jun 2026US 2026/0173842 A1
Most cited
By later US patents
- Conformal doping via plasma activated atomic layer deposition and conformal film deposition594US 8,956,983 B2Novellus Systems, Inc. · 2015
- Plasma activated conformal film deposition548US 8,728,956 B2Novellus Systems, Inc. · 2014
- Methods for depositing silicon oxide501US 9,685,320 B2Lam Research Corporation · 2017
- Multi-dice chip scale semiconductor components and wafer level methods of fabrication456US 6,841,883 B1Micron Technology, Inc. · 2005
- Plasma-activated deposition of conformal films403US 8,524,612 B2Novellus Systems, Inc. · 2013