Apparatus including tsv and multiple insulating materials
AssigneeMicron Technology, Inc.
InventorTomohiko Kudo
Life of this patent
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AssigneeMicron Technology, Inc.
InventorTomohiko Kudo
Estimating the term…
Some embodiments of the disclosure provide an apparatus comprising a plurality of wirings in a metal layer, a through-silicon via (TSV) coupled to at least one first wiring of the plurality of wirings, and an insulating layer under the metal layer. The insulating layer includes a first portion in a first region where the TSV is provided and configured to cover at least top part of the TSV. The insulating layer includes a second portion in a second region where the TSV is not provided. The second insulating portion includes a second insulating material (e.g., SiO or SiOC) different from a first insulating material (e.g., SiCN) of the first insulating portion. One or more second wirings of the plurality of wirings may be located in the second region for supplying a higher voltage than other wirings of the plurality of wirings in the metal layer.
An apparatus, comprising:
An apparatus, comprising:
An apparatus, comprising:
Dependencies are inferred from the claim text.