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US 12,588,479 B2Granted
Solid-state image sensor, and electronic device
AssigneeSony Semiconductor Solutions Corporation
InventorHideaki Togashi
Life of this patent
Estimating the term…
Abstract
There is provided an image sensor including a semiconductor substrate having a first side and a second side and a photoelectric conversion element disposed at the first side of the semiconductor substrate. In addition, a through electrode is coupled to the photoelectric conversion element, where the through electrode includes a conductive portion and an insulating film. A thickness of the insulating film between the semiconductor substrate and the conductive portion at the first side of the semiconductor substrate is different than the thickness of the insulting film between the semiconductor substrate and the conductive portion at the second side of the semiconductor substrate.
Claims20
A light detecting device, comprising:
- a semiconductor substrate having a first side and a second side;
- a photoelectric conversion element;
- and a through electrode coupled to the photoelectric conversion element, the through electrode including a conductive portion, an insulating film, and a fixed charge film,
- wherein the first side of the semiconductor substrate is disposed between the photoelectric conversion element and the second side of the semiconductor substrate,
- wherein the insulating film is disposed above the fixed charge film in a cross-sectional view, wherein a first portion of the insulating film is disposed above the first side of the semiconductor substrate and a second portion of the insulating film is disposed in the semiconductor substrate,
- wherein the conductive portion of the through electrode is disposed in the semiconductor substrate,
- wherein an incline of the second portion of the insulating film is different from an incline of a sidewall of the conductive portion of the through electrode, and
- wherein the incline of the second portion of the insulating film is less than 90 degrees from the incline of the sidewall of the conductive portion of the through electrode.
5 more elements
An electronic device comprising:
- a solid-state image sensor, the solid-state image sensor including:
- a semiconductor substrate having a first side and a second side;
- a photoelectric conversion element;
- and
- a through electrode coupled to the photoelectric conversion element, the through electrode including a conductive portion, an insulating film, and a fixed charge film,
- wherein the first side of the semiconductor substrate is disposed between the photoelectric conversion element and the second side of the semiconductor substrate,
- wherein the insulating film is disposed above the fixed charge film in a cross-sectional view,
- wherein a first portion of the insulating film is disposed above the first side of the semiconductor substrate and a second portion of the insulating film is disposed in the semiconductor substrate,
- wherein the conductive portion of the through electrode is disposed in the semiconductor substrate, wherein an incline of the second portion of the insulating film is different from an incline of a sidewall of the conductive portion of the through electrode, and
- wherein the incline of the second portion of the insulating film is less than 90 degrees from the incline of the sidewall of the conductive portion of the through electrode.
7 more elements
An imaging device, comprising:
- a semiconductor substrate having a first side and a second side;
- a photoelectric conversion element;
- and
- a plurality of through electrodes directly coupled to the photoelectric conversion element, each through electrode of the plurality of through electrodes including a conductive portion, an insulating film, and a fixed charge film,
- wherein the first side of the semiconductor substrate is disposed between the photoelectric conversion element and the second side of the semiconductor substrate,
- wherein the insulating film is disposed above the fixed charge film in a cross-sectional view,
- wherein a first portion of the insulating film is disposed above the first side of the semiconductor substrate and a second portion of the insulating film is disposed in the semiconductor substrate,
- wherein the conductive portion of the through electrode is disposed in the semiconductor substrate, wherein an incline of the second portion of the insulating film is different from an incline of a sidewall of the conductive portion of each through electrode, and
- wherein the incline of the second portion of the insulating film is less than 90 degrees from the incline of the sidewall of the conductive portion of the through electrode.
6 more elements
Dependencies are inferred from the claim text.