H10W 10/0126
Introducing electrical active impurities in local oxidation regions to create channel stoppers
Official title: {introducing electrical active impurities in local oxidation regions to create channel stoppers}
H10W10/0126 (Introducing electrical active impurities in local oxidation regions to create channel stoppers) appears on 356 US grants and 56 published applications in this corpus.
Search patents in H10W- Granted patents
- 356
- Published applications
- 56
- Assignees
- 100
- Inventors
- 545
- Latest grant
- 1 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 7 | 0 |
| 1977 | 6 | 0 |
| 1978 | 6 | 0 |
| 1979 | 6 | 0 |
| 1980 | 9 | 0 |
| 1981 | 11 | 0 |
| 1982 | 5 | 0 |
| 1983 | 9 | 0 |
| 1984 | 18 | 0 |
| 1985 | 7 | 0 |
| 1986 | 11 | 0 |
| 1987 | 13 | 0 |
| 1988 | 12 | 0 |
| 1989 | 13 | 0 |
| 1990 | 9 | 0 |
| 1991 | 14 | 0 |
| 1992 | 13 | 0 |
| 1993 | 9 | 0 |
| 1994 | 13 | 0 |
| 1995 | 12 | 0 |
| 1996 | 13 | 0 |
| 1997 | 16 | 0 |
| 1998 | 17 | 0 |
| 1999 | 19 | 0 |
| 2000 | 19 | 0 |
| 2001 | 17 | 7 |
| 2002 | 7 | 4 |
| 2003 | 2 | 4 |
| 2004 | 7 | 7 |
| 2005 | 5 | 3 |
| 2006 | 1 | 2 |
| 2007 | 5 | 2 |
| 2008 | 0 | 7 |
| 2009 | 6 | 1 |
| 2010 | 1 | 0 |
| 2011 | 1 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 2 |
| 2014 | 0 | 0 |
| 2015 | 0 | 2 |
| 2016 | 1 | 1 |
| 2017 | 4 | 2 |
| 2018 | 1 | 1 |
| 2019 | 1 | 1 |
| 2020 | 4 | 3 |
| 2021 | 1 | 2 |
| 2022 | 1 | 1 |
| 2023 | 1 | 1 |
| 2024 | 1 | 2 |
| 2025 | 1 | 1 |
| 2026 | 1 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Donor substrate for the transfer of a thin layer and associated transfer method1 Sep 2026US 12,727,448 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Apparatuses and methods for organizing data in a memory device11 Mar 2025US 12,249,377 B2
- Method of fabricating a semiconductor device23 Jan 2024US 11,881,508 B2Samsung Electronics Co., Ltd.
- Apparatuses and methods for organizing data in a memory device25 Jul 2023US 11,710,524 B2Micron Technology, Inc.
- Semiconductor device including a densified device isolation layer5 Jul 2022US 11,380,760 B2Samsung Electronics Co., Ltd.
- Apparatuses and methods for organizing data in a memory device12 Jun 2025US 2025/0191969 A1Lodestar Licensing Group LLC
- Apparatuses and methods for organizing data in a memory device16 May 2024US 2024/0161830 A1Lodestar Licensing Group LLC
- Donor substrate for the transfer of a thin layer and associated transfer method25 Jan 2024US 2024/0030061 A1Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Semiconductor structure and method for manufacturing same27 Apr 2023US 2023/0126794 A1Changxin Memory Technologies, Inc.
- Method of fabricating a semiconductor device6 Oct 2022US 2022/0320278 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Process for producing the field oxide of an integrated circuit477US 4,455,193 ACommissariat A L' Energie Atomique · 1984
- Fabrication of complementary n-channel and p-channel circuits (ICs) useful in the manufacture of dynamic random access memories (drams)117US 5,272,367 AMicron Technology, Inc. · 1993
- Manufacturing a field oxide region for a semiconductor device115US 4,570,325 AKabushiki Kaisha Toshiba · 1986
- Modular bipolar-CMOS-DMOS analog integrated circuit & power transistor technology114US 6,855,985 B2Advanced Analogic Technologies (Hong Kong) Limited · 2005
- Method for fabricating MOS device with self-aligned contacts111US 4,466,172 AAmerican Microsystems, Inc. · 1984