Manufacturing a field oxide region for a semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorTakayoshi Higuchi
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Abstract
A method of manufacturing a semiconductor device in which a micro-patterned field oxide film can be formed includes the steps of: sequentially forming an oxidation-resistive film and an oxidizable film on a semiconductor substrate; forming a window in a predetermined region of said oxidizable film, in which said oxidation-resistive film is exposed; performing thermal oxidation to said oxidizable film so as to convert it into an insulating film and for narrowing a width of said window by volume expansion due to conversion; forming a field oxide film in a region of said semiconductor substrate defined by said window of said insulating film; and forming a semiconductor element in the region of said semiconductor substrate isolated by said field oxide film.
Claims11
A method of manufacturing a semiconductor device, comprising the steps of:
- (a) sequentially forming an oxidation-resistive film and an oxidizable film on a semiconductor substrate;
- (b) forming a window in a predetermined region of said oxidizable film, in which said oxidation-resistive film is exposed;
- (c) performing thermal oxidation to said oxidizable film so as to convert said oxidizable film into an insulating film and for narrowing a width of said window by volume expansion due to conversion;
- (d) forming a field oxide film in a region of said semiconductor substrate defined by said window of said insulating film;
- and
- (e) forming a semiconductor element in the region of said semiconductor substrate isolated by said field oxide film.
Dependencies are inferred from the claim text.