Method of fabricating a semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsKyungin Choi, Hyunchul Song, Sunjung Kim, Taegon Kim, Seong Hoon Jeong
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Abstract
A semiconductor device includes a substrate including a first active pattern and a second active pattern, a device isolation layer filling a first trench between the first and second active patterns, the device isolation layer including a silicon oxide layer doped with helium, a helium concentration of the device isolation layer being higher than a helium concentration of the first and second active patterns, and a gate electrode crossing the first and second active patterns.
Claims19
A method of fabricating a semiconductor device, the method comprising:
- patterning a substrate to form active patterns;
- forming a device isolation layer to fill a trench between the active patterns;
- forming a gate electrode on the active patterns after forming the device isolation layer;
- and
- forming an interlayer insulating layer to cover the gate electrode,
- wherein:
- forming the device isolation layer includes:
- forming a preliminary insulating layer on the substrate to fill the trench;
- injecting a light species into the preliminary insulating layer by performing a first ion implantation process;
- and
- performing a wet annealing process on the preliminary insulating layer,
- the first ion implantation process is performed at a temperature of 200° C. to 600° C.,
- the light species includes H, He, C, N, O, Ar, Kr, or Xe, and
- forming the interlayer insulating layer includes performing a second ion implantation process using the light species.
A method of fabricating a semiconductor device, the method comprising:
- patterning a substrate to form active patterns;
- forming a device isolation layer to fill a trench between the active patterns;
- forming a sacrificial pattern crossing the active patterns;
- forming an interlayer insulating layer on the sacrificial pattern;
- and
- replacing the sacrificial pattern into a gate electrode,
- wherein:
- forming the device isolation layer includes:
- forming a preliminary insulating layer on the substrate to fill the trench;
- injecting a light species into the preliminary insulating layer by performing a first ion implantation process;
- and
- performing a wet annealing process on the preliminary insulating layer,
- forming the interlayer insulating layer includes:
- forming a preliminary insulating layer on the sacrificial pattern,
- injecting the light species into the preliminary insulating layer by performing a second ion implantation process, and
- performing a wet annealing process on the preliminary insulating layer,
- the first and second ion implantation processes are each performed at a temperature of 200° C. to 600° C., and
- the light species includes H, He, C, N, O, Ar, Kr, or Xe.
A method of fabricating a semiconductor device, the method comprising:
- forming a preliminary insulating layer on a substrate;
- performing a bake process on the preliminary insulating layer while providing an oxygen source onto the preliminary insulating layer;
- injecting a light species into the preliminary insulating layer by performing a first ion implantation process;
- forming a silicon oxide layer from the preliminary insulating layer by performing a wet annealing process on the preliminary insulating layer,
- forming a gate electrode on the substrate after forming the silicon oxide layer;
- and
- forming an interlayer insulating layer to cover the gate electrode,
- wherein forming the interlayer insulating layer includes performing a second ion implantation process using the light species,
- wherein the first and second ion implantation processes are each performed at a temperature of 200° C. to 600° C., and
- wherein the light species includes H, He, C, N, O, Ar, Kr, or Xe.
Dependencies are inferred from the claim text.