H10P 72/0436
Mainly by radiation
Official title: {mainly by radiation}
H10P72/0436 (Mainly by radiation) appears on 2,921 US grants and 3,587 published applications in this corpus.
Search patents in H10P- Granted patents
- 2,921
- Published applications
- 3,587
- Assignees
- 737
- Inventors
- 5,912
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 2 | 0 |
| 1981 | 0 | 0 |
| 1982 | 2 | 0 |
| 1983 | 2 | 0 |
| 1984 | 5 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 3 | 0 |
| 1988 | 4 | 0 |
| 1989 | 19 | 0 |
| 1990 | 13 | 0 |
| 1991 | 11 | 0 |
| 1992 | 14 | 0 |
| 1993 | 22 | 0 |
| 1994 | 30 | 0 |
| 1995 | 21 | 0 |
| 1996 | 21 | 0 |
| 1997 | 8 | 0 |
| 1998 | 25 | 0 |
| 1999 | 47 | 0 |
| 2000 | 61 | 0 |
| 2001 | 66 | 31 |
| 2002 | 66 | 64 |
| 2003 | 54 | 64 |
| 2004 | 61 | 89 |
| 2005 | 47 | 83 |
| 2006 | 59 | 68 |
| 2007 | 40 | 79 |
| 2008 | 34 | 127 |
| 2009 | 47 | 92 |
| 2010 | 57 | 102 |
| 2011 | 71 | 106 |
| 2012 | 73 | 115 |
| 2013 | 83 | 129 |
| 2014 | 97 | 176 |
| 2015 | 116 | 176 |
| 2016 | 110 | 166 |
| 2017 | 159 | 190 |
| 2018 | 152 | 172 |
| 2019 | 147 | 203 |
| 2020 | 173 | 218 |
| 2021 | 166 | 200 |
| 2022 | 156 | 228 |
| 2023 | 152 | 213 |
| 2024 | 153 | 178 |
| 2025 | 146 | 192 |
| 2026 | 123 | 126 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Plasma processing device and plasma processing method6 Oct 2026US 12,757,669 B2Hitachi High-Tech Corporation
- Heating/cooling device and heating/cooling method6 Oct 2026US 12,757,671 B2Tokyo Electron Limited
- Substrate treating apparatus and substrate treating method6 Oct 2026US 12,757,672 B2Semes Co., Ltd.
- Rapid and precise temperature control for thermal etching6 Oct 2026US 12,757,675 B2Lam Research Corporation
- Substrate processing module and laser beam providing method29 Sep 2026US 12,749,663 B2Semes Co., Ltd.
- Method for fabricating a semiconductor device using heat treatment apparatus8 Oct 2026US 2026/0314299 A1Samsung Electronics Co., Ltd.
- Multiple-chamber reactor for selective deposition of silicon nitride and method of using same1 Oct 2026US 2026/0297752 A1ASM IP Holding B. V.
- Defect inspection apparatus, substrate bonding apparatus, and defect inspection method1 Oct 2026US 2026/0305261 A1SCREEN Holdings Co., Ltd.
- Substrate processing apparatus and substrate processing method24 Sep 2026US 2026/0293572 A1Shibaura Mechatronics Corporation
- Formation of low-temperature and high-temperature in-situ doped source and drain epitaxy using selective heating for wrap-around contact and vertically stacked device architectures24 Sep 2026US 2026/0293625 A1Tokyo Electron Limited
Most cited
By later US patents
- Substrate platform for a semiconductor substrate during rapid high temperature processing and method of supporting a substrate678US 6,090,212 AMicro C Technologies, Inc. · 2000
- Wafer processing cluster tool batch preheating and degassing apparatus663US 5,259,881 AMaterials Research Corporation · 1993
- Susceptor drive and wafer displacement mechanism660US 5,421,893 AAPPLIED Materials.Inc. · 1995
- Rapid thermal processing apparatus for processing semiconductor wafers624US 5,444,217 AMoore Epitaxial, Inc. · 1995
- Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment622US 4,821,674 A1989