Method for fabricating a semiconductor device using heat treatment apparatus

A method for fabricating a semiconductor device, the method comprising:

• forming a warpage control layer entirely on a lower surface of a wafer having a warpage;
• adjusting a size of an open region of a shutter in a first horizontal direction parallel to an upper surface of the shutter, the shutter positioned below the wafer inside a chamber;
• providing to the warpage control layer a light that is emitted from a light source and passes through the shutter;
• adjusting the warpage of the wafer by partially changing a temperature of the warpage control layer using the light provided to the warpage control layer;
• determining whether the warpage of the wafer is within a predetermined range while the warpage of the wafer is being adjusted;
• and
• stopping the emission of the light from the light source when the warpage of the wafer is within the predetermined range,
• wherein the shutter is positioned between the light source and the lower surface of the wafer.

A method for fabricating a semiconductor device, the method comprising:

• obtaining a warpage measurement information by measuring a warpage of a wafer;
• loading the wafer having the warpage into a chamber;
• forming a warpage control layer entirely on a lower surface of the wafer inside the chamber;
• adjusting a size of an open region of a shutter in a first horizontal direction parallel to an upper surface of the shutter using the warpage measurement information, the shutter positioned below the wafer inside the chamber;
• providing to the warpage control layer a light that is emitted from a light source and passes through the shutter;
• adjusting the warpage of the wafer by partially changing a temperature of the warpage control layer using the light provided to the warpage control layer;
• determining whether the warpage of the wafer is within a predetermined range while the warpage is being adjusted;
• and
• stopping the emission of the light from the light source when the warpage of the wafer is within the predetermined range,
• wherein the shutter is positioned between the light source and the lower surface of the wafer,
• wherein each of the lower surface of the wafer and a lower surface of the warpage control layer is spaced apart from the upper surface of the shutter in a vertical direction, and
• wherein the open region extends in a second horizontal direction parallel to the upper surface of the shutter, and the second horizontal direction is perpendicular to the first horizontal direction.