Substrate platform for a semiconductor substrate during rapid high temperature processing and method of supporting a substrate

A platform for supporting a semiconductor substrate during processing in a processing chamber, said platform comprising:

• a first member defining a first support surface adapted to support the substrate thereon;
• and
• a second member including a second support surface and a third support surface, said first member being supported by said second support surface of said second member and being releasably coupled to said second member, said third support surface of said second member being adapted to be supported in the processing chamber, and one of said first member and said second member including at least one positioning pin and the other of said first member and said second member including a positioning pin receiving structure for releasably coupling said first member and said second member together.

A platform for supporting a semiconductor substrate during processing in a processing chamber, said platform comprising:

• a first member defining a first support surface adapted to support the substrate thereon;
• and
• a second member including a second support surface and a third support surface, said first member being supported by said second support surface of said second member, said third support surface of said second member being adapted to be supported in the processing chamber, and said first member being spaced radially inward of said second member whereby said first member is radially unrestrained to permit relative radial thermal expansion of said first and second members during the thermal processing of the substrate.

A platform for supporting a semiconductor substrate during processing in a processing chamber, said platform comprising:

• a first member defining a first support surface adapted to support the substrate thereon;, and
• a second member including a second support surface and a third support surface, said first member being supported by said second support surface of said second member, said third support surface of said second member being adapted to be supported in the processing chamber, said first member including a plurality of lift openings, and said lift openings being adapted to permit substrate lift pins to project through said first member for lifting the substrate off said first support surface of said first member.

A platform for supporting a semiconductor substrate during processing in a processing chamber, said platform comprising:

• a first member defining a first support surface adapted to support the substrate thereon;
• and
• a second member including a second support surface and a third support surface, said first member being supported by said second support surface of said second member, said third support surface of said second member being adapted to be supported in the processing chamber, said first member comprising a disc member, said disc member having a recessed surface and an annular surface extending around said recessed surface, and said recessed surface defining said first support surface.

A platform for supporting a semiconductor substrate during processing in a processing chamber, said platform comprising:

• a first member defining a first support surface adapted to support the substrate thereon;
• and
• a second member including a second support surface and a third support surface, said first member being supported by said second support surface of said second member, said third support surface of said second member being adapted to be supported in the processing chamber, said second member comprising a ring shaped member defining a first annular surface on one side of said ring shaped member and said third support surface on an opposite side of said ring shaped member from said first annular surface, and said second support surface being recessed and positioned inwardly of said first annular surface.

A platform for supporting a semiconductor substrate during processing in a processing chamber, said platform comprising:

• a first member defining a first support surface adapted to support the substrate thereon;
• and
• a second member including a second support surface and a third support surface, said first member being supported by said second support surface of said second member, said third support surface of said second member being adapted to be supported in the processing chamber, and said first member and said second member comprising a material selected from the group comprising quartz, silicon carbide, zirconia, alumina, aluminum, steel, and silicon carbide coated graphite.

A platform for supporting a semiconductor substrate during processing in a processing chamber, said platform comprising:

• a first member defining a first support surface adapted to support the substrate thereon;
• and
• a second member including a second support surface and a third support surface, said first member being supported by said second support surface of said second member, said third support surface of said second member being adapted to be supported in the processing chamber, and said first support surface comprising a foraminous support surface, said foraminous support surface being adapted to permit heating and cooling of the substrate.

A platform for supporting a semiconductor substrate during processing in a processing chamber, said platform comprising:

• a first member defining a first support surface adapted to support the substrate thereon;
• and
• a second member including a second support surface and a third support surface, said first member being supported by said second support surface of said second member, and said third support surface of said second member being adapted to be supported in the processing chamber, and said first member including a slot, said slot extending transversely through at least a portion of said first member whereby said slot relieves hoop stresses in said first member during thermal processing of the substrate.