Rapid and precise temperature control for thermal etching
AssigneeLam Research Corporation
InventorsNathan Lavdovsky, Butch Berney, Mark Naoshi Kawaguchi, Ji Zhu, Hongbo Si
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AssigneeLam Research Corporation
InventorsNathan Lavdovsky, Butch Berney, Mark Naoshi Kawaguchi, Ji Zhu, Hongbo Si
Estimating the term…
Apparatuses and methods are described. An apparatus may include a processing chamber including chamber walls, a chamber heater configured to heat the walls, a pedestal positioned within the chamber and including a substrate heater having a plurality of light emitting diodes (LEDs) configured to emit light with wavelengths in the range of 400 nanometers (nm) and 800 nm, a window positioned above the heater and having a material transparent to light with wavelengths in the range of 400 nm and 800 nm, and three or more substrate supports, each having a substrate support surface vertically offset from the window and configured to support a substrate such that the window and the substrate are offset by a nonzero distance.
An apparatus for semiconductor processing, the apparatus comprising:
A method comprising:
A method comprising:
Dependencies are inferred from the claim text.