H10P 52/403
Of conductive or resistive materials
Official title: {of conductive or resistive materials}
H10P52/403 (Of conductive or resistive materials) appears on 3,326 US grants and 3,865 published applications in this corpus.
Search patents in H10P- Granted patents
- 3,326
- Published applications
- 3,865
- Assignees
- 595
- Inventors
- 5,649
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 3 | 0 |
| 1991 | 4 | 0 |
| 1992 | 5 | 0 |
| 1993 | 6 | 0 |
| 1994 | 5 | 0 |
| 1995 | 6 | 0 |
| 1996 | 7 | 0 |
| 1997 | 10 | 0 |
| 1998 | 20 | 0 |
| 1999 | 43 | 0 |
| 2000 | 96 | 0 |
| 2001 | 119 | 62 |
| 2002 | 160 | 187 |
| 2003 | 167 | 227 |
| 2004 | 153 | 206 |
| 2005 | 128 | 198 |
| 2006 | 125 | 155 |
| 2007 | 109 | 151 |
| 2008 | 92 | 134 |
| 2009 | 63 | 115 |
| 2010 | 61 | 102 |
| 2011 | 69 | 68 |
| 2012 | 60 | 85 |
| 2013 | 76 | 73 |
| 2014 | 95 | 90 |
| 2015 | 83 | 179 |
| 2016 | 149 | 152 |
| 2017 | 151 | 148 |
| 2018 | 124 | 154 |
| 2019 | 152 | 216 |
| 2020 | 192 | 271 |
| 2021 | 175 | 227 |
| 2022 | 135 | 169 |
| 2023 | 137 | 156 |
| 2024 | 136 | 139 |
| 2025 | 129 | 123 |
| 2026 | 80 | 78 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Polishing method for gallium nitride wafer6 Oct 2026US 12,757,663 B2Disco Corporation
- Methods of forming an abrasive slurry and methods for chemical-mechanical polishing29 Sep 2026US 12,746,637 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Physical vapor deposition system and methods of operating the same29 Sep 2026US 12,747,492 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Inhibitor for RuO4 gas generation and method for inhibiting RuO4 gas generation22 Sep 2026US 12,741,925 B2Tokuyama Corporation
- Polishing composition for semiconductor process and method for polishing a substrate using the same22 Sep 2026US 12,742,096 B2Ycchem Co., Ltd.
- Semiconductor device and method of manufacturing semiconductor device1 Oct 2026US 2026/0304882 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for manufacturing semiconductor device, and semiconductor device1 Oct 2026US 2026/0304908 A1Resonac Corporation
- Polishing method and polishing apparatus1 Oct 2026US 2026/0305264 A1Ebara Corporation
- Semiconductor structures and methods of forming the same1 Oct 2026US 2026/0305303 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor Device Structure Having a Multi-Layer Conductive Feature and Method Making the Same1 Oct 2026US 2026/0305330 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Chemical mechanical polishing slurry for metal layers541US 5,527,423 ACabot Corporation · 1996
- Low temperature system and method for CVD copper removal383US 5,897,379 ASharp Kabushiki Kaisha · 1999
- Method and apparatus for electro-chemical mechanical deposition328US 6,176,992 B1Nutool, Inc. · 2001
- Dual etch stop/diffusion barrier for damascene interconnects315US 6,153,935 AInternational Business Machines Corporation · 2000
- Removable amorphous carbon CMP stop298US 6,541,397 B1APPLIED Materials.Inc. · 2003