Method for manufacturing semiconductor device, and semiconductor device

A semiconductor device comprising:

• a first semiconductor substrate including a first substrate body, a first electrode disposed on the first substrate body, and a first insulating layer disposed around the first electrode on the first substrate body;
• and
• a second semiconductor substrate including a second substrate body, a second electrode disposed on the second substrate body, and a second insulating layer disposed around the second electrode on the second substrate body,
• wherein the first electrode of the first semiconductor substrate and the second electrode of the second semiconductor substrate are bonded to each other, and the first insulating layer of the first semiconductor substrate and the second insulating layer of the second semiconductor substrate are bonded to each other, and
• wherein a first bonded surface between the first electrode and the second electrode are located closer to the side of the first substrate body than a second bonded surface between the first insulating layer and the second insulating layer.

A semiconductor device comprising:

• a first substrate body;
• a first electrode disposed on the first substrate body;
• a second substrate body;
• a second electrode disposed on the second substrate body and bonded to the first electrode;
• and
• an insulating layer disposed around the first electrode and the second electrode between the first substrate body and the second substrate body,
• wherein shear strength of the insulating layer is equal to or greater than 25 MPa and equal to or less than 35 MPa.