Methods of forming an abrasive slurry and methods for chemical-mechanical polishing
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSheng-Mu You, Chi-Jen Liu
Life of this patent
Estimating the term…
Abstract
A method of performing a polishing process is provided. The method may include forming spherical titanium dioxide nano-particles, covering the spherical titanium dioxide nano-particles with an organic coating, storing the spherical titanium dioxide nano-particles together with an oxidizer, forming a polishing solution with the spherical titanium dioxide nano-particles, applying the polishing solution on a surface of a work piece, and polishing the surface of the work piece with the polishing solution.
Claims20
A method of performing a polishing process, the method comprising:
- forming spherical titanium dioxide nano-particles;
- covering the spherical titanium dioxide nano-particles with an organic coating;
- storing the spherical titanium dioxide nano-particles together with an oxidizer;
- forming a polishing solution with the spherical titanium dioxide nano-particles, wherein the organic coating on the spherical titanium dioxide nano-particles is at least partially removed after forming the polishing solution with the spherical titanium dioxide nano-particles;
- applying the polishing solution on a surface of a work piece;
- and
- polishing the surface of the work piece with the polishing solution.
A method of performing a chemical mechanical polishing (CMP) process, the method comprising:
- forming single-crystalline titanium dioxide nano-particles;
- forming a protective layer of organic material on the single-crystalline titanium dioxide nano-particles;
- storing the single-crystalline titanium dioxide nano-particles for a period of time;
- forming a CMP slurry with the single-crystalline titanium dioxide nano-particles and an acid, wherein the acid removes the protective layer of organic material;
- applying the CMP slurry and optical radiation on a surface of a device;
- and
- polishing the surface of the device with the CMP slurry.
A method of performing a chemical mechanical polishing (CMP) process, the method comprising:
- forming titanium dioxide nano-particles, wherein a first quantity of the titanium dioxide nano-particles comprise an anatase crystalline structure, wherein a second quantity of the titanium dioxide nano-particles comprise a rutile crystalline structure, and wherein the first quantity is larger than the second quantity;
- forming protective layers on the titanium dioxide nano-particles;
- storing the titanium dioxide nano-particles with the protective layers;
- forming a CMP slurry by mixing the titanium dioxide nano-particles with the protective layers and an acid, wherein the acid at least partially removes the protective layers from the titanium dioxide nano-particles;
- applying the CMP slurry and optical radiation on a surface of a device;
- and
- polishing the surface of the device with the CMP slurry.
Dependencies are inferred from the claim text.