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AssigneeTokuyama Corporation
InventorsTomoaki Sato, Yuki Kikkawa, Takafumi Shimoda, Takayuki Negishi
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Provided are an inhibitor for RuO4 gas generation used in a manufacturing process of a semiconductor element, that inhibits a RuO4 gas generated when a semiconductor wafer containing ruthenium and a treatment liquid are brought into contact, and a method for inhibiting the RuO4 gas. Specifically, provided is an inhibitor for RuO4 gas generation for inhibiting a RuO4 gas generated when a semiconductor wafer containing ruthenium and a treatment liquid are brought into contact in semiconductor formation steps, wherein the inhibitor includes an onium salt consisting of an onium ion and a bromine-containing ion. Also provided is a method for inhibiting RuO4 gas generation by adding the inhibitor to a ruthenium treatment liquid or a ruthenium-containing liquid used in semiconductor formation steps.
A ruthenium treatment liquid comprising an onium salt consisting of an onium ion and a bromine-containing ion, and an oxidizing agent comprising a hypobromite ion, wherein the hypobromite ion concentration in the ruthenium treatment liquid is 0.001 mol/L or more and 0.20 mol/L or less, and the concentration of the onium salt in the ruthenium treatment liquid is 0.0001 to 50% by mass.
Dependencies are inferred from the claim text.