Polishing method for gallium nitride wafer
AssigneeDisco Corporation
InventorsSatori Kindaichi, Ayumu Sakai, Norihisa Arifuku
Life of this patent
Estimating the term…
Abstract
A polishing method for a gallium nitride wafer includes a holding step of holding a first surface side of the gallium nitride wafer by a holding table, and a polishing step of polishing the gallium nitride wafer while supplying a polishing liquid to an area between a polishing pad and the gallium nitride wafer in a state in which the polishing pad is in contact with a second surface located on a side opposite to the first surface side of the gallium nitride wafer held by the holding table. The polishing liquid contains dissolved therein permanganate and a water-soluble ionic compound including one of or both nitrate ions and cerium(IV) ions.
Claims5
A polishing method for a gallium nitride wafer, comprising:
- a holding step of holding a first surface side of the gallium nitride wafer by a holding table;
- and
- a polishing step of polishing the gallium nitride wafer while supplying a polishing liquid to an area between a polishing pad and the gallium nitride wafer in a state in which the polishing pad is in contact with a second surface located on a side opposite to the first surface side of the gallium nitride wafer held by the holding table,
- wherein the polishing liquid contains dissolved therein permanganate and a water-soluble ionic compound including both nitrate ions and cerium (IV) ions, and the weight ratio of the permanganate to the water-soluble ionic compound includes 1:0.15 to 1:0.45.
Dependencies are inferred from the claim text.