H10P 50/646
Of group iii-v materials
Official title: {of Group III-V materials}
H10P50/646 (Of group iii-v materials) appears on 652 US grants and 613 published applications in this corpus.
Search patents in H10P- Granted patents
- 652
- Published applications
- 613
- Assignees
- 285
- Inventors
- 1,337
- Latest grant
- 11 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 5 | 0 |
| 1977 | 4 | 0 |
| 1978 | 10 | 0 |
| 1979 | 2 | 0 |
| 1980 | 5 | 0 |
| 1981 | 2 | 0 |
| 1982 | 8 | 0 |
| 1983 | 5 | 0 |
| 1984 | 2 | 0 |
| 1985 | 1 | 0 |
| 1986 | 6 | 0 |
| 1987 | 9 | 0 |
| 1988 | 2 | 0 |
| 1989 | 3 | 0 |
| 1990 | 6 | 0 |
| 1991 | 4 | 0 |
| 1992 | 9 | 0 |
| 1993 | 12 | 0 |
| 1994 | 7 | 0 |
| 1995 | 5 | 0 |
| 1996 | 2 | 0 |
| 1997 | 2 | 0 |
| 1998 | 10 | 0 |
| 1999 | 5 | 0 |
| 2000 | 6 | 0 |
| 2001 | 4 | 2 |
| 2002 | 4 | 7 |
| 2003 | 3 | 8 |
| 2004 | 10 | 10 |
| 2005 | 7 | 19 |
| 2006 | 11 | 11 |
| 2007 | 7 | 6 |
| 2008 | 4 | 5 |
| 2009 | 3 | 14 |
| 2010 | 8 | 10 |
| 2011 | 11 | 10 |
| 2012 | 7 | 13 |
| 2013 | 12 | 29 |
| 2014 | 11 | 18 |
| 2015 | 31 | 43 |
| 2016 | 42 | 58 |
| 2017 | 59 | 82 |
| 2018 | 53 | 53 |
| 2019 | 65 | 53 |
| 2020 | 52 | 45 |
| 2021 | 38 | 35 |
| 2022 | 24 | 24 |
| 2023 | 23 | 19 |
| 2024 | 16 | 21 |
| 2025 | 9 | 11 |
| 2026 | 6 | 7 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Control and localization of porosity in III-nitrides and methods of using and making thereof11 Aug 2026US 12,707,907 B2Yale University
- GaN-based trench metal oxide Schottky barrier diode and preparation method therefor21 Jul 2026US 12,690,204 B2Sun Yat-Sen University
- Semiconductor device and method for manufacturing the same7 Jul 2026US 12,677,608 B2Mitsubishi Electric Corporation
- Bonded semiconductor device and method for manufacturing bonded semiconductor device26 May 2026US 12,641,924 B2Shin-Etsu Handotai Co., Ltd.
- Method to improve performances of tunnel junctions grown by metal organic chemical vapor deposition10 Feb 2026US 12,550,481 B2The Regents of the University of Califoria
- Chemical solution, method for processing processing target, and method for producing semiconductor device27 Aug 2026US 2026/0250574 A1FUJIFILM Corporation
- Chemical-resistant protective film9 Jul 2026US 2026/0193459 A1Nissan Chemical Corporation
- Fabrication process for hemt devices with field plates25 Jun 2026US 2026/0181934 A1NXP USA, Inc.
- Semiconductor structure and fabricating method thereof11 Jun 2026US 2026/0164741 A1Hon Hai Precision Industry Co., Ltd.
- Apparatuses and methods for etching process4 Jun 2026US 2026/0157153 A1Tokyo Electron Limited
Most cited
By later US patents
- High surface quality GaN wafer and method of fabricating same116US 6,488,767 B1Advanced Technology Materials, Inc. · 2002
- Semiconductor device and method of fabricating the same107US 6,011,271 AFujitsu Limited · 2000
- Method of etching a workpiece99US 8,815,720 B2Varian Semiconductor Equipment Associates, Inc. · 2014
- Method of manufacturing semiconductor devices using laser beam cutting80US 4,224,101 AU. S. Philips Corporation · 1980
- Method of cleaving semiconductor diode laser wafers80US 4,237,601 AExxon Research & Engineering Co. · 1980