H10P 50/648
Anisotropic liquid etching
Official title: {Anisotropic liquid etching}
H10P50/648 (Anisotropic liquid etching) appears on 153 US grants and 148 published applications in this corpus.
Search patents in H10P- Granted patents
- 153
- Published applications
- 148
- Assignees
- 120
- Inventors
- 435
- Latest grant
- 9 Dec 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 2 | 0 |
| 1979 | 0 | 0 |
| 1980 | 2 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 3 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 5 | 0 |
| 1987 | 5 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 2 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 3 | 0 |
| 1999 | 2 | 0 |
| 2000 | 1 | 0 |
| 2001 | 2 | 0 |
| 2002 | 3 | 2 |
| 2003 | 1 | 3 |
| 2004 | 0 | 1 |
| 2005 | 3 | 3 |
| 2006 | 2 | 7 |
| 2007 | 3 | 4 |
| 2008 | 2 | 3 |
| 2009 | 2 | 7 |
| 2010 | 2 | 3 |
| 2011 | 7 | 6 |
| 2012 | 1 | 4 |
| 2013 | 4 | 7 |
| 2014 | 2 | 5 |
| 2015 | 9 | 9 |
| 2016 | 10 | 9 |
| 2017 | 10 | 12 |
| 2018 | 10 | 7 |
| 2019 | 7 | 13 |
| 2020 | 11 | 10 |
| 2021 | 5 | 6 |
| 2022 | 7 | 9 |
| 2023 | 9 | 7 |
| 2024 | 5 | 7 |
| 2025 | 1 | 3 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Plasma etched silicon carbide9 Dec 2025US 12,494,372 B2SPTS Technologies Limited
- Method for structuring a semiconductor surface and semiconductor body comprising a semiconductor surface having at least one structure17 Sep 2024US 12,094,928 B2OSRAM Opto Semiconductors GmbH
- Method of fabricating super-junction based vertical gallium nitride JFET and MOSFET power devices3 Sep 2024US 12,080,757 B2Semiconductor Components Industries, LLC
- Semiconductor structure comprising p-type N-face GAN-based semiconductor layer and manufacturing method for the same3 Sep 2024US 12,080,786 B2Enkris Semiconductor, Inc.
- Etching solution and method for aluminum nitride12 Mar 2024US 11,929,257 B2Versum Materials US, LLC
- Fabrication process for hemt devices with field plates25 Jun 2026US 2026/0181934 A1NXP USA, Inc.
- Methods of selectively forming group iii nitride semiconductor regions on epitaxially grown group iii nitride semiconductor layer structures and related semiconductor devices27 Nov 2025US 2025/0364246 A1MACOM Technology Solutions Holdings, Inc.
- Method for manufacturing nitride semiconductor device13 Nov 2025US 2025/0349736 A1Sumitomo Electric Industries, Ltd.
- Method for performing nanotransfer without chemical treatment and substrate fabricated by the method27 Feb 2025US 2025/0069890 A1Korea Institute of Machinery & Materials
- Method of fabricating super-junction based vertical gallium nitride jfet and mosfet power devices7 Nov 2024US 2024/0371929 A1Semiconductor Components Industries, LLC
Most cited
By later US patents
- High surface quality GaN wafer and method of fabricating same116US 6,488,767 B1Advanced Technology Materials, Inc. · 2002
- Method of cleaving semiconductor diode laser wafers80US 4,237,601 AExxon Research & Engineering Co. · 1980
- High surface quality GaN wafer and method of fabricating same77US 6,951,695 B2Cree, Inc. · 2005
- Method of undercut anisotropic etching of semiconductor material74US 4,600,934 A1986
- Etch method of cleaving semiconductor diode laser wafers66US 4,236,296 AExxon Research & Engineering Co. · 1980