Method for structuring a semiconductor surface and semiconductor body comprising a semiconductor surface having at least one structure
AssigneeOSRAM Opto Semiconductors GmbH
InventorsMarkus Tautz, Matthew John Davies, Martin Welzel
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Abstract
In an embodiment a method for structuring a semiconductor surface includes providing the semiconductor surface, wherein the semiconductor surface is part of a GaN-semiconductor layer, irradiating the semiconductor surface with an electron beam in order to produce an irradiated section and anisotropic wet-chemical etching of the semiconductor surface, wherein an etching rate in the irradiated section is less than that in an unirradiated section of the semiconductor surface, and wherein no etching mask is applied to the semiconductor surface before anisotropic wet-chemical etching.
Claims19
A method for structuring a semiconductor surface, the method comprising:
- providing the semiconductor surface, wherein the semiconductor surface is part of a GaN-semiconductor layer;
- irradiating the semiconductor surface by moving an electron beam over the semiconductor surface in order to produce an irradiated section;
- and
- anisotropic wet-chemical etching of the semiconductor surface,
- wherein an etching rate in the irradiated section is less than that in an unirradiated section of the semiconductor surface, and
- wherein no etching mask is applied to the semiconductor surface before anisotropic wet-chemical etching.
A method for structuring a semiconductor surface, the method comprising:
- providing the semiconductor surface, wherein the semiconductor surface is part of a GaN-semiconductor layer;
- irradiating the semiconductor surface with an electron beam in order to produce an irradiated section;
- and
- anisotropic wet-chemical etching of the semiconductor surface,
- wherein an etching rate in the irradiated section is less than that in an unirradiated section of the semiconductor surface,
- wherein no etching mask is applied to the semiconductor surface before anisotropic wet-chemical etching, and
- wherein at least one ring-shaped section of the semiconductor surface is irradiated with the electron beam.
Dependencies are inferred from the claim text.