Semiconductor structure comprising p-type N-face GAN-based semiconductor layer and manufacturing method for the same
AssigneeEnkris Semiconductor, Inc.
InventorKai Cheng
Life of this patent
Estimating the term…
Abstract
Embodiments of the present application disclose a semiconductor structure and a manufacturing method for the semiconductor structure, which solve problems of complicated manufacturing process and poor stability and reliability of existing semiconductor structures. The semiconductor structure includes: a substrate; a channel layer, a barrier layer and a semiconductor layer sequentially superimposed on the substrate, wherein the semiconductor layer is made of a GaN-based material and an upper surface of the semiconductor layer is Ga-face; and a p-type GaN-based semiconductor layer, with N-face as an upper surface, formed in a gate region of the semiconductor layer.
Claims17
A semiconductor structure, comprising:
- a substrate;
- a channel layer, a barrier layer and a semiconductor layer sequentially superimposed on the substrate, wherein the semiconductor layer is made of a GaN-based material and an upper surface of the semiconductor layer is Ga-face;
- and
- a p-type GaN-based semiconductor layer, with N-face as an upper surface, formed in a gate region of the semiconductor layer,
- wherein the barrier layer comprises a first outer interlayer AlGaN, an intermediate layer GaN and a second outer interlayer AlGaN that are sequentially stacked on a surface of the channel layer.
A manufacturing method for a semiconductor structure, comprising:
- preparing a channel layer, a barrier layer and a semiconductor layer sequentially superimposed on a substrate, wherein the semiconductor layer is made of a GaN-based material and an upper surface of the semiconductor layer is Ga-face;
- and
- preparing a p-type GaN-based semiconductor layer with N-face as an upper surface above the semiconductor layer,
- wherein the barrier layer comprises a first outer interlayer AlGaN, an intermediate layer GaN and a second outer interlayer AlGaN that are sequentially stacked on a surface of the channel layer.
Dependencies are inferred from the claim text.