Method to improve performances of tunnel junctions grown by metal organic chemical vapor deposition

A device, comprising:

• a mesa;
• a first metal contact on the mesa, wherein the mesa comprises:
• a III-Nitride active region between a cathode contact layer and a p-type layer, wherein the cathode contact layer comprises a first III-Nitride n-type layer;
• a second III-Nitride n-type layer on the p-type layer forming a tunnel junction between the second III-Nitride n-type layer and the p-type layer;
• an n-type anode contact layer between the second III-Nitride n-type layer and the first metal contact;
• and
• a second metal contact on the cathode contact layer;
• wherein:
• the device emits electromagnetic radiation in response to a recombination of holes with electrons in the III-Nitride active region when an electric field or voltage is applied across the anode contact layer and the cathode contact layer using the first metal contact and the second metal contact, and
• the p-type layer has a chemically treated sidewall comprising a reduced number of defects of a type that:
• are formed during formation of the mesa by dry etching, and
• suppress diffusion of hydrogen, formed during growth of the p-type layer, out of the p-type layer during a thermal activation of the device, and
• the reduced number of defects increase a hole concentration and reduce a voltage across the anode contact layer and the cathode contact layer for a given current density flowing between the anode contact layer and the cathode contact layer.