Semiconductor device and method of fabricating the same
AssigneeFujitsu Limited
InventorsYoshiki Sakuma, Yoshihiro Sugiyama, Shunichi Muto
Life of this patent
Estimating the term…
Abstract
In a semiconductor device, concave sections in which an opening area becomes small in proportion as a depth becomes deep are formed in a crystal layer, and a quantum structure is formed on at least one crystal face of a bottom section of the concave section and a border formed between plural sidewalls thereof. In case the quantum structure is formed in the bottom section, a quantum box is formed therein. If the quantum structure is formed in the border between the sidewalls of the concave section, a quantum wire is formed therein. In case the quantum structure is formed in the sidewall of the concave section, a two-dimensional quantum well is formed therein.
Claims35
A semiconductor device comprising:
- a crystal layer having a main face other than (111) A;
- at least one concave section formed in said main face of said crystal layer, having an inverse pyramid shape which has at least three side faces;
- and
- at least one quantum structure formed on at least one of a bottom of said concave section, said side faces of said concave section, and intersecting lines of said surfaces of said concave section.
A semiconductor device, comprising:
- a crystal layer of a diamond type crystal structure;
- a concave section having an inverse quadrangular pyramid shape formed in said crystal layer;
- and
- a tunneling structure formed in said concave section, said tunneling structure having a conductive layer and an insulating layer, and said insulating layer having a thickness through which carriers can be drifted tunneled.
A semiconductor device comprising:
- a crystal layer having a diamond type crystal structure;
- a concave section formed in said crystal layer, said concave section having an inverse quadrangular pyramid shape;
- minute structures formed in said concave section by stacking alternately well layer and barrier layer, said barrier layer having a thickness through which carriers can tunnel.
A semiconductor device comprising:
- a substrate having a surface of {111} B orientation;
- a concave formed in said substrate having an inverse pyramid shape which has at least three side faces;
- and
- first compound semiconductor formed on bottom and the side faces of said concave and having energy band structures on said bottom and said side faces of said concave.
Dependencies are inferred from the claim text.