Method of etching a workpiece
AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorsLudovic Godet, Morgan D. Evans, Chi-Chun Chen
Life of this patent
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Abstract
A workpiece is implanted to a first depth to form a first amorphized region. This amorphized region is then etched to the first depth. After etching, the workpiece is implanted to a second depth to form a second amorphized region below a location of the first amorphized region. The second amorphized region is then etched to the second depth. The implant and etch steps may be repeated until structure is formed to the desired depth. The workpiece may be, for example, a compound semiconductor, such as GaN, a magnetic material, silicon, or other materials.
Claims9
A method of forming a structure in a workpiece comprising:
- implanting a workpiece to a first depth to form a first amorphized region;
- etching said first amorphized region to said first depth;
- implanting a workpiece to a second depth to form a second amorphized region below a location of said first amorphized region after said etching of said first amorphized region;
- and
- etching said second amorphized region to said second depth, wherein said workpiece in said first amorphized region comprises a first material and said workpiece in said second amorphized region comprises a second material different from said first material.
Dependencies are inferred from the claim text.