H10P 50/269
Pre- or post-treatments
Official title: {pre- or post-treatments, e.g. anti-corrosion processes}
H10P50/269 (Pre- or post-treatments) appears on 124 US grants and 170 published applications in this corpus.
Search patents in H10P- Granted patents
- 124
- Published applications
- 170
- Assignees
- 62
- Inventors
- 463
- Latest grant
- 12 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 1 | 0 |
| 2002 | 1 | 1 |
| 2003 | 1 | 2 |
| 2004 | 1 | 2 |
| 2005 | 3 | 7 |
| 2006 | 2 | 10 |
| 2007 | 2 | 1 |
| 2008 | 1 | 4 |
| 2009 | 2 | 2 |
| 2010 | 0 | 1 |
| 2011 | 1 | 5 |
| 2012 | 5 | 3 |
| 2013 | 4 | 5 |
| 2014 | 3 | 0 |
| 2015 | 1 | 6 |
| 2016 | 4 | 11 |
| 2017 | 10 | 8 |
| 2018 | 8 | 16 |
| 2019 | 18 | 14 |
| 2020 | 7 | 12 |
| 2021 | 10 | 10 |
| 2022 | 9 | 14 |
| 2023 | 9 | 12 |
| 2024 | 4 | 5 |
| 2025 | 9 | 9 |
| 2026 | 6 | 10 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Wiring forming method and substrate processing apparatus12 May 2026US 12,628,588 B2SCREEN Holdings Co., Ltd.
- Low-stress passivation layer5 May 2026US 12,622,262 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Atomic layer etching of molybdenum7 Apr 2026US 12,598,929 B2Lam Research Corporation
- Methods of forming memory device with reduced resistivity3 Feb 2026US 12,543,521 B2APPLIED Materials.Inc.
- Metal removal method, dry etching method, and production method for semiconductor element13 Jan 2026US 12,522,930 B2Resonac Corporation
- Etching method and etching apparatus1 Oct 2026US 2026/0305203 A1Hitachi High-Tech Corporation
- Low-stress passivation layer3 Sep 2026US 2026/0262487 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method of metal surface treatment using gcib for next generation interconnect27 Aug 2026US 2026/0255897 A1Tokyo Electron Limited
- Etchant composition for etching metal nitride layer and method of forming pattern using the same20 Aug 2026US 2026/0242663 A1Dongwoo Fine-Chem Co., Ltd.
- Method of treating thin films and method of manufacturing memory device16 Jul 2026US 2026/0206509 A1EGTM Co., Ltd.
Most cited
By later US patents
- Oxide and metal removal562US 9,309,598 B2APPLIED Materials.Inc. · 2016
- Treatment for corrosion in substrate processing232US 7,084,070 B1Lam Research Corporation · 2006
- Cobalt-containing material removal103US 9,947,549 B1APPLIED Materials.Inc. · 2018
- Metal removal with reduced surface roughness98US 9,659,791 B2APPLIED Materials.Inc. · 2017
- Selective in situ cobalt residue removal96US 10,049,891 B1APPLIED Materials.Inc. · 2018