US 12,543,521 B2 · Methods of forming memory device with reduced resistivity

Abstract

Memory devices and methods of forming memory devices are described. The memory devices comprise a silicon nitride hard mask layer on a ruthenium layer. Forming the silicon nitride hard mask layer on the ruthenium comprises pre-treating the ruthenium layer with a plasma to form an interface layer on the ruthenium layer; and forming a silicon nitride layer on the interface layer by plasma-enhanced chemical vapor deposition (PECVD). Pre-treating the ruthenium layer, in some embodiments, results in the interface layer having a reduced roughness and the memory device having a reduced resistivity compared to a memory device that does not include the interface layer.

Claims15

Dependent claims

A method of forming a silicon nitride hard mask layer on a ruthenium metal layer, the method comprising:

forming a first layer selected from the group consisting of titanium (Ti), tantalum (Ta), titanium silicide (TiSi) or tantalum silicide (TaSi) on a substrate;
forming the ruthenium metal layer on the first layer;
pre-treating the ruthenium metal layer with a plasma while flowing a gas selected from the group consisting of NH3, N2O, N2, Ar, and combinations thereof to form an interface layer on the ruthenium metal layer, the interface layer comprising one or more of an oxide, a nitride, and a carbide of ruthenium;
and
forming the silicon nitride hard mask layer directly on the interface layer using a plasma-enhanced chemical vapor deposition (PECVD) process.

2 more elements

Dependencies are inferred from the claim text.

Methods of forming memory device with reduced resistivity

Life of this patent

Methods of forming memory device with reduced resistivity

Life of this patent

Abstract

Claims15