Method of treating thin films and method of manufacturing memory device

A thin film processing method comprising:

• supplying a surface modifier to an interior of a chamber in which a substrate having a thin film formed thereon is placed;
• purging the interior of the chamber;
• supplying an etchant to the interior of the chamber;
• and
• purging the interior of the chamber,
• wherein the etchant is represented by any one of the following <Formula 1>, <Formula 2>, and <Formula 3>:
• In the <Formula 1> or <Formula 2>, X1 to X2 may each be the same or different from each other, and are independently selected from hydrogen, chlorine element, and chloroalkyl group having 1 to 5 carbon atoms, R1 to R3 may each be the same or different from each other, and are independently selected from hydrogen, linear, branched, or cyclic alkyl group having 1 to 5 carbon atoms, aryl group having 6 to 12 carbon atoms, hydroxy group having 0 to 4 carbon atoms, and alkoxy group having 0 to 4 carbon atoms, and
• In the <Formula 3>, n is each independently selected from integers of 0 to 5, X1 to X3 are each independently selected from alkoxy group having 1 to 5 carbon atoms and dialkylamino group having 1 to 5 carbon atoms, and R is selected from hydrogen, linear, branched, or cyclic alkyl group having 1 to 5 carbon atoms, alkoxy group having 1 to 5 carbon atoms, and dialkylamino group having 1 to 5 carbon atoms.