Treatment for corrosion in substrate processing

A method for performing a dual damascene process on a substrate, said substrate including a dielectric layer disposed above an etch stop layer, said etch stop layer being disposed above a metal layer, comprising:

• performing plasma etching through said dielectric layer using a first etchant source gas to form a plurality of dielectric-layer openings;
• performing plasma etching through said etch stop layer, using a second etchant source gas different from said first etchant source gas, said second etchant source gas including chlorine, thereby forming etch stop layer openings in said etch stop layer, said etch stop layer including at least one of a SiN and SiC material;
• performing one of a de-ionized water rinse and a HCl dip/de-ionized water rinse on said substrate;
• and
• thereafter performing a wet treatment on said substrate, said wet treatment including a rinse using a solution that contains acetic acid (CH3COOH).

A method for processing substrate to form a semiconductor device, said substrate including an etch stop layer disposed above a metal layer, comprising:

• etching through said etch stop layer, using a plasma etch process that utilizes a chlorine-containing etchant source gas, wherein said chlorine-containing etchant source gas includes an inert gas, said inert gas including at least one of Ar, He, Ne, Kr, and Xe, thereby forming etch stop layer openings in said etch stop layer, said etch stop layer including at least one of a SiN and SiC material;
• performing a HCL solution dip on said substrate;
• thereafter performing a rinse on said substrate, said rinse using a rinsing solution that includes de-ionized water;
• and
• thereafter performing a H2 plasma treatment on said substrate.

A method for processing substrate to form a semiconductor device, said substrate including an etch stop layer disposed above a copper metal layer, comprising:

• etching through said etch stop layer, using a plasma etch process that utilizes a chlorine-containing etchant source gas, thereby forming etch stop layer openings in said etch stop layer, said etch stop layer including at least one of a SiN and SiC material;
• performing a wet chemical treatment on said substrate, said wet chemical treatment employing a solution that includes an organic acid or a mixture of an organic acid and a hydroxide;
• and
• thereafter passivating said copper metal layer through said etch stop layer openings with a passivating solution that includes benzotriazole(BTA).

A method for processing substrate to form a semiconductor device, said substrate including an etch stop layer disposed above a metal layer, comprising:

• etching through said etch stop layer, using a plasma etch process that utilizes a chlorine-containing etchant source gas, thereby forming etch stop layer openings in said etch stop layer, said etch stop layer including at least one of a SiN and SiC material;
• performing a HCL dip/de-ionized water rinse on said substrate;
• and
• thereafter performing a wet treatment on said substrate, said wet treatment including a rinse using a solution that contains acetic acid (CH3COOH).