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US 12,628,588 B2Granted
Wiring forming method and substrate processing apparatus
AssigneeSCREEN Holdings Co., Ltd.
InventorsMasaki Inaba, Akihisa Iwasaki
Life of this patent
Estimating the term…
Abstract
A wiring forming method includes a loading step (Si), an etching step (S3), and a reducing step (S6). In the loading step (S1), a substrate having a metal wiring portion formed thereon is loaded into a chamber. In the etching step (S3), an oxidizing gas is supplied to the substrate to etch one part of the metal wiring portion. In the reducing step (S6), a reducing gas is supplied to the substrate to reduce an oxide film of the metal wiring portion formed by the etching step (S3).
Claims10
A wiring forming method comprising:
- loading a substrate having a metal wiring portion formed on said substrate into a chamber;
- supplying an oxidizing gas to said substrate to etch one part of said metal wiring portion;
- and
- supplying a reducing gas to said substrate to reduce an oxide film of said metal wiring portion formed by supplying said oxidizing gas, wherein
- said metal wiring portion comprises:
- a wiring main body positioned in a trench of an insulating film in said substrate;
- and
- a barrier film provided between said wiring main body and said insulating film;
- and wherein
- an upper surface of the wiring main body is recessed from an upper surface of the barrier film;
- in supplying said oxidizing gas, etching a projecting portion of said barrier film projecting beyond an upper surface of said wiring main body;
- and
- in supplying said reducing gas, reducing said oxide film formed on said wiring main body by said supplying said oxidizing gas.
10 more elements
Dependencies are inferred from the claim text.