H10P 30/221
Characterised by the angle between the ion beam and the mask
Official title: {characterised by the angle between the ion beam and the mask}
H10P30/221 (Characterised by the angle between the ion beam and the mask) appears on 1,343 US grants and 1,333 published applications in this corpus.
Search patents in H10P- Granted patents
- 1,343
- Published applications
- 1,333
- Assignees
- 313
- Inventors
- 2,182
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 2 | 0 |
| 1984 | 2 | 0 |
| 1985 | 2 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 3 | 0 |
| 1992 | 2 | 0 |
| 1993 | 10 | 0 |
| 1994 | 9 | 0 |
| 1995 | 7 | 0 |
| 1996 | 11 | 0 |
| 1997 | 6 | 0 |
| 1998 | 20 | 0 |
| 1999 | 31 | 0 |
| 2000 | 30 | 0 |
| 2001 | 45 | 14 |
| 2002 | 40 | 33 |
| 2003 | 45 | 34 |
| 2004 | 41 | 54 |
| 2005 | 32 | 55 |
| 2006 | 40 | 54 |
| 2007 | 38 | 55 |
| 2008 | 31 | 59 |
| 2009 | 38 | 64 |
| 2010 | 58 | 47 |
| 2011 | 44 | 88 |
| 2012 | 64 | 68 |
| 2013 | 61 | 69 |
| 2014 | 82 | 46 |
| 2015 | 58 | 82 |
| 2016 | 87 | 86 |
| 2017 | 68 | 61 |
| 2018 | 56 | 49 |
| 2019 | 53 | 56 |
| 2020 | 36 | 47 |
| 2021 | 44 | 42 |
| 2022 | 33 | 55 |
| 2023 | 32 | 35 |
| 2024 | 43 | 37 |
| 2025 | 25 | 35 |
| 2026 | 9 | 8 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method of manufacturing semiconductor device and semiconductor device having trench contact25 Aug 2026US 12,721,073 B2Fuji Electric Co., Ltd.
- Semiconductor device with integrated junction field effect transistor and associated manufacturing method26 May 2026US 12,641,866 B2Monolithic Power Systems, Inc.
- Semiconductor device with integrated junction field effect transistor and associated manufacturing method26 May 2026US 12,641,867 B2Monolithic Power Systems, Inc.
- Power semiconductor device and methods of producing a power semiconductor device19 May 2026US 12,635,175 B2Infineon Technologies Austria AG
- Semiconductor device and manufacturing method of semiconductor device12 May 2026US 12,628,386 B2Fuji Electric Co., Ltd.
- Two-rotation gate-edge diode leakage reduction for mos6 Aug 2026US 2026/0231464 A1
- Ion implantation processing system11 Jun 2026US 2026/0165049 A1Rohm Co., Ltd.
- Semiconductor device with doped region between gate and drain2 Apr 2026US 2026/0096133 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor die with a vertical transistor device26 Mar 2026US 2026/0090086 A1Infineon Technologies Austria AG
- Method Of Manufacturing Semiconductor Device And A Semiconductor Device26 Feb 2026US 2026/0059854 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Low-K gate spacers by fluorine implantation252US 6,720,213 B1International Business Machines Corporation · 2004
- Semiconductor device having metal silicide film220US 5,659,194 AMitsubishi Denki Kabushiki Kaisha · 1997
- Process for fabricating a non-volatile memory device194US 6,537,881 B1Advanced Micro Devices, Inc. · 2003
- Process for producing two bit ROM cell utilizing angled implant187US 6,030,871 ASaifun Semiconductors Ltd. · 2000
- Field-effect transistor for alleviating short-channel effects174US 6,548,842 B1National Semiconductor Corporation · 2003