Semiconductor device with integrated junction field effect transistor and associated manufacturing method
AssigneeMonolithic Power Systems, Inc.
InventorsVipindas Pala, Sauvik Chowdhury
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a first source region, a first sidewall body region, a gate region, a second source region and a link region formed in a substrate of a first conductivity type. The first source region and the second source region may be of the first conductivity type while the first sidewall body region and the link region may be of a second conductivity type opposite to the first conductivity type. The link region and the gate region are respectively disposed at a first side and a second side of the first source region. The first sidewall body region may be disposed below or underneath the first source region.
Claims27
A semiconductor device, comprising:
- a semiconductor layer of a first conductivity type;
- an epitaxial layer of the first conductivity type formed on the semiconductor layer;
- a first source region, formed in the epitaxial layer and near a top surface of the epitaxial layer, the first source region being of the first conductivity type;
- a first sidewall body region of a second conductivity type, disposed below or underneath the first source region, the second conductivity type being opposite to the first conductivity type;
- a body contact region of the second conductivity type, formed closely next to or in adjoining neighbor to the first source region, and disposed in the epitaxial layer at a first side of the first source region;
- a gate region, formed in the epitaxial layer closely next to or in adjoining neighbor to the first source region, and disposed in the epitaxial layer at a second side of the first source region;
- a second source region of the first conductivity type, formed below or underneath the first sidewall body region in the epitaxial layer;
- and
- a link region of the second conductivity type, disposed at the first side of the first source region and having a portion disposed deeper than a bottom surface the body contact region in the epitaxial layer.
A semiconductor device including a plurality of transistor cells, wherein each one of the plurality of transistor cells comprising:
- a semiconductor layer of a first conductivity type;
- an epitaxial layer of the first conductivity type formed on the semiconductor layer;
- a first source region, formed in the epitaxial layer and near a top surface of the epitaxial layer, the first source region being of the first conductivity type;
- a first sidewall body region of a second conductivity type, disposed below or underneath the first source region, the second conductivity type being opposite to the first conductivity type;
- a body contact region of the second conductivity type, formed closely next to or in adjoining neighbor to the first source region, and disposed in the epitaxial layer at a first side of the first source region;
- a gate region, formed in the epitaxial layer closely next to or in adjoining neighbor to the first source region, and disposed in the epitaxial layer at a second side of the first source region;
- a second source region of the first conductivity type, formed below or underneath the first sidewall body region in the epitaxial layer;
- and
- a link region of the second conductivity type, disposed at the first side of the first source region and having a portion disposed deeper than a bottom surface the body contact region in the epitaxial layer.
Dependencies are inferred from the claim text.