Semiconductor device with doped region between gate and drain

A semiconductor device comprising:

• a gate structure disposed over a substrate, the gate structure having a first sidewall and a second sidewall opposite the first sidewall;
• a first source/drain region formed in the substrate;
• a second source/drain region formed in the substrate and adjacent to the second sidewall of the gate structure;
• a protective dielectric layer extending from a top surface of the gate structure across the first sidewall of the gate structure to the first source/drain region;
• and
• a doped region formed in the substrate and overlapped by the protective dielectric layer, wherein from a top view, the doped region extends lengthwise along a first direction and widthwise along a second direction different from the first direction, and the protective dielectric layer also extends lengthwise along the first direction and widthwise along the second direction.

A semiconductor device comprising:

• a semiconductor substrate;
• a first source/drain region formed in the semiconductor substrate;
• a second source/drain region formed in the semiconductor substrate;
• a gate structure disposed laterally between the first source/drain region and the second source/drain region, wherein from a top view, the gate structure extends lengthwise along a first direction and widthwise along a second direction different from the first direction;
• and
• a doped region in the semiconductor substrate and laterally between the gate structure and the first source/drain region, wherein from the top view, the doped region extends lengthwise along the first direction and widthwise along the second direction, wherein a length of the doped region in the first direction is greater than a length of the gate structure in the first direction.