Semiconductor device and manufacturing method of semiconductor device

Abstract

Provided is a semiconductor device including a transistor portion, in which the transistor portion has a drift region of a first conductivity type provided in a semiconductor substrate, a base region of a second conductivity type provided above the drift region, an accumulation region of the first conductivity type provided above the drift region, a plurality of trench portions provided to extend from a front surface of the semiconductor substrate to the drift region, and a trench bottom portion of the second conductivity type provided in bottom portions of the plurality of trench portions, and the accumulation region has a doping concentration with a half width of 0.3 μm or more.

Dependencies are inferred from the claim text.