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AssigneeAdvanced Micro Devices, Inc.
InventorsBharath Rangarajan, David Foote, Fei Wang, Steven K. Park
Estimating the term…
A process for fabricating a non-volatile memory device in which extraneous electrical charge is removed from charge-storage layers during fabrication includes exposing a charge-storage layer to infrared radiation prior to forming additional layers of the non-volatile memory cell. For example, in a memory cell incorporating a dielectric floating-gate electrode, such as silicon nitride, the infrared radiation exposure step is carried out after forming the floating-gate electrodes and prior to formation of the control-gate electrode. By exposing the charge-storage layer to infrared radiation prior to forming additional layers, extraneous electrical charge arising from previous processing steps can be efficiently removed from the floating-gate electrodes.
A process for fabricating a non-volatile memory device comprising the steps of:
A process for fabricating a non-volatile memory device comprising the steps of:
A process for fabricating a non-volatile semiconductor device comprising the steps of:
Dependencies are inferred from the claim text.