H10P 14/69433
The material being a silicon nitride not containing oxygen
Official title: {the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz}
H10P14/69433 (The material being a silicon nitride not containing oxygen) appears on 5,019 US grants and 5,317 published applications in this corpus.
Search patents in H10P- Granted patents
- 5,019
- Published applications
- 5,317
- Assignees
- 709
- Inventors
- 8,515
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 10 | 0 |
| 1977 | 12 | 0 |
| 1978 | 9 | 0 |
| 1979 | 6 | 0 |
| 1980 | 8 | 0 |
| 1981 | 6 | 0 |
| 1982 | 11 | 0 |
| 1983 | 7 | 0 |
| 1984 | 10 | 0 |
| 1985 | 10 | 0 |
| 1986 | 21 | 0 |
| 1987 | 14 | 0 |
| 1988 | 16 | 0 |
| 1989 | 17 | 0 |
| 1990 | 9 | 0 |
| 1991 | 16 | 0 |
| 1992 | 11 | 0 |
| 1993 | 22 | 0 |
| 1994 | 22 | 0 |
| 1995 | 16 | 0 |
| 1996 | 20 | 0 |
| 1997 | 22 | 0 |
| 1998 | 26 | 0 |
| 1999 | 50 | 0 |
| 2000 | 78 | 0 |
| 2001 | 138 | 51 |
| 2002 | 134 | 144 |
| 2003 | 111 | 153 |
| 2004 | 141 | 129 |
| 2005 | 95 | 160 |
| 2006 | 94 | 159 |
| 2007 | 96 | 117 |
| 2008 | 82 | 158 |
| 2009 | 87 | 121 |
| 2010 | 93 | 88 |
| 2011 | 108 | 80 |
| 2012 | 88 | 88 |
| 2013 | 86 | 103 |
| 2014 | 98 | 155 |
| 2015 | 168 | 297 |
| 2016 | 305 | 350 |
| 2017 | 310 | 341 |
| 2018 | 342 | 394 |
| 2019 | 325 | 419 |
| 2020 | 389 | 450 |
| 2021 | 349 | 339 |
| 2022 | 235 | 265 |
| 2023 | 212 | 222 |
| 2024 | 196 | 220 |
| 2025 | 178 | 225 |
| 2026 | 110 | 89 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium6 Oct 2026US 12,757,653 B2Kokusai Electric Corporation
- Method of forming a silicon comprising layer6 Oct 2026US 12,757,656 B2ASM IP Holding B. V.
- Treating silicon nitride based dielectric films6 Oct 2026US 12,757,657 B2APPLIED Materials.Inc.
- Remote plasma deposition with electrostatic clamping6 Oct 2026US 12,757,682 B2Lam Research Corporation
- Semiconductor structure, semiconductor device with air spacers, and method for fabricating the same6 Oct 2026US 12,757,738 B2Nanya Technology Corporation
- Semiconductor structure8 Oct 2026US 2026/0314475 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Multiple-chamber reactor for selective deposition of silicon nitride and method of using same1 Oct 2026US 2026/0297752 A1ASM IP Holding B. V.
- Structure and Method for Deep Trench Capacitor with Reduced Deformation1 Oct 2026US 2026/0304797 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Methods of forming gate-all-around (gaa) devices1 Oct 2026US 2026/0304842 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Monolithic microwave integrated circuit1 Oct 2026US 2026/0304907 A1Qorvo US, Inc.
Most cited
By later US patents
- Semiconductor device and manufacturing method thereof4,349US 7,674,650 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Semiconductor device and manufacturing method thereof4,064US 7,732,819 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Fin structure of FinFET1,337US 9,093,530 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Semiconductor device and manufacturing method thereof849US 7,910,490 B2Semiconductor Energy Laboratory Co.Ltd. · 2011
- Semiconductor device and manufacturing method thereof834US 7,932,521 B2Semiconductor Energy Laboratory Co.Ltd. · 2011