Semiconductor device and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsKengo Akimoto, Tatsuya Honda, Norihito Sone
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Abstract
An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
Claims20
A method of manufacturing a semiconductor device comprising:
- forming an oxide semiconductor film over a substrate;
- and
- etching the oxide semiconductor film by using a gas containing at least one of fluorine and chlorine to form a channel region of a thin film transistor,
- wherein the oxide semiconductor film comprises In—Ga—Zn—O based oxide semiconductor.
A method of manufacturing a semiconductor device comprising:
- forming an oxide semiconductor film over a substrate;
- and
- forming the oxide semiconductor film into an island-shaped region by dry etching using a gas containing at least one of fluorine and chlorine,
- wherein the oxide semiconductor film comprises In-Ga-Zn-O based oxide semiconductor.
A method of manufacturing a semiconductor device comprising:
- forming an oxide semiconductor film over a substrate;
- and
- forming the oxide semiconductor film by into an island-shaped region by dry etching using a gas containing at least one of fluorine and chlorine,
- wherein the oxide semiconductor film comprises In-Ga-Zn-O based oxide semiconductor.
A method of manufacturing a semiconductor device comprising:
- forming an oxide semiconductor film over a substrate;
- forming a mask of a resist over the oxide semiconductor film;
- and
- selectively etching the oxide semiconductor film by using the mask and a gas containing at least one of fluorine and chlorine,
- wherein the oxide semiconductor film comprises In-Ga-Zn-O based oxide semiconductor.
Dependencies are inferred from the claim text.