H10N 70/028
By conversion of electrode material
Official title: {by conversion of electrode material, e.g. oxidation}
H10N70/028 (By conversion of electrode material) appears on 285 US grants and 323 published applications in this corpus.
Search patents in H10N- Granted patents
- 285
- Published applications
- 323
- Assignees
- 90
- Inventors
- 462
- Latest grant
- 3 Mar 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2003 | 0 | 1 |
| 2004 | 1 | 1 |
| 2005 | 1 | 4 |
| 2006 | 3 | 5 |
| 2007 | 0 | 1 |
| 2008 | 3 | 19 |
| 2009 | 7 | 26 |
| 2010 | 17 | 21 |
| 2011 | 19 | 23 |
| 2012 | 22 | 23 |
| 2013 | 22 | 25 |
| 2014 | 31 | 29 |
| 2015 | 34 | 23 |
| 2016 | 23 | 25 |
| 2017 | 24 | 20 |
| 2018 | 17 | 13 |
| 2019 | 14 | 17 |
| 2020 | 13 | 8 |
| 2021 | 8 | 10 |
| 2022 | 6 | 7 |
| 2023 | 10 | 7 |
| 2024 | 2 | 6 |
| 2025 | 6 | 4 |
| 2026 | 2 | 5 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Multifilament resistive memory with insulation layers3 Mar 2026US 12,568,776 B2International Business Machines Corporation
- Lateral programmable metallization cell devices13 Jan 2026US 12,527,236 B2Arizona Board of Regents on behalf of Arizona State University
- Semiconductor device and method for fabricating the same23 Dec 2025US 12,507,418 B2SK hynix Inc.
- Structures for three-terminal memory cells2 Dec 2025US 12,490,660 B2Globalfoundries Singapore Pte. Ltd.
- Resistive memory device and manufacturing method of the resistive memory device18 Nov 2025US 12,477,959 B2SK hynix Inc.
- Self-healing ferroelectric capacitors with endurance improvement at high temperatures7 May 2026US 2026/0130131 A1Georgia Tech Research Corporation
- Lateral programmable metallization cell devices26 Mar 2026US 2026/0090288 A1Arizona Board of Regents on behalf of Arizona State University
- Structures for three-terminal memory cells5 Mar 2026US 2026/0068543 A1Globalfoundries Singapore Pte. Ltd.
- Semiconductor device and manufacturing method of semiconductor device5 Mar 2026US 2026/0068549 A1SK hynix Inc.
- Resistive memory device and manufacturing method of the resistive memory device19 Feb 2026US 2026/0052911 A1SK hynix Inc.
Most cited
By later US patents
- Multi-level cell resistance random access memory with metal oxides268US 7,697,316 B2Macronix International Co., Ltd. · 2010
- Semiconductor memory and method of manufacturing the same237US 8,008,732 B2Kabushiki Kaisha Toshiba · 2011
- Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same96US 7,824,956 B2SanDisk 3D LLC · 2010
- Methods for forming resistive switching memory elements by heating deposited layers88US 8,143,092 B22012
- Point contact array, not circuit, and electronic circuit comprising the same70US 7,026,911 B2Japan Science and Technology Corporation · 2006