Methods for forming resistive switching memory elements by heating deposited layers
OwnerPragati Kumar, Sean Barstow +2inventors
InventorsPragati Kumar, Sean Barstow, Sunil Shanker, Tony Chiang
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Abstract
Resistive switching nonvolatile memory elements are provided. A metal-containing layer and an oxide layer for a memory element can be heated using rapid thermal annealing techniques. During heating, the oxide layer may decompose and react with the metal-containing layer. Oxygen from the decomposing oxide layer may form a metal oxide with metal from the metal-containing layer. The resulting metal oxide may exhibit resistive switching for the resistive switching memory elements.
Claims13
A method for fabricating a resistive switching memory element, comprising:
- forming a metal-containing layer that comprises a first metal;
- forming an oxide layer adjacent to the metal-containing layer;
- and
- heating the metal-containing layer and the oxide layer to oxidize the first metal in the metal-containing layer with oxygen from the oxide layer and thereby form a resistive switching metal oxide layer and form a metal layer from a second metal that was contained in the oxide layer, wherein forming the metal layer comprises forming a second electrode.
A method for fabricating a resistive switching memory element, comprising:
- forming a metal-containing layer comprising a first metal;
- and
- forming an oxide layer adjacent to the metal-containing layer, the oxide layer comprising a near noble metal;
- and
- heating the metal-containing layer and the oxide layer to oxidize the first metal from the metal-containing layer with oxygen from the oxide layer and thereby form a resistive switching metal oxide layer and form a metal layer from the near noble metal that was contained in the oxide layer, wherein forming the metal layer from the near noble metal comprises forming a second electrode.
Dependencies are inferred from the claim text.